Materials for emergent silicon-integrated optical computing.

Progress in computing architectures is approaching a paradigm shift: traditional computing based on digital complementary metal-oxide semiconductor technology is nearing physical limits in terms of miniaturization, speed, and, especially, power consumption. Consequently, alternative approaches are under investigation. One of the most promising is based on a "brain-like" or scheme.

Anodized Nickel Foam for Oxygen Evolution Reaction in Fe-Free and Unpurified Alkaline Electrolytes at High Current Densities.

To achieve practically high electrocatalytic performance for the oxygen evolution reaction (OER), the active surface area should be maximized without severely compromising electron and mass transport throughout the catalyst electrode. Though the importance of electron and mass transport has been studied using low surface area catalysts under low current densities (∼tens of mA/cm), the transport properties of large surface area catalysts under high operating current densities (∼500 mA/cm) for practical OER catalysis have rarely been explored. Herein, three-dimensional (3D) hierarchically porous anodized nickel foams (ANFs) with large and variable surface areas were synthesized electrochemical anodization of 3D nickel foam and applied as OER electrocatalysts in Fe-free and unpurified KOH electrolytes.

A Vacuum Ultraviolet-Enhanced Oxidation Mechanism for Pd: Near-Surface Oxidation for Atomic Layer Etching.

Density functional theory (DFT) is used to better understand the oxidation of Pd metal using vacuum ultraviolet (VUV) light co-exposed with O, which is known to produce O and O. The oxidation of Pd metal arising from O, O, and O is assessed on bare Pd, Pd with a 0.25 monolayer of adsorbed atomic O, and Pd with increasing O incorporation into the substrate.

Zintl layer formation during perovskite atomic layer deposition on Ge (001).

Using in situ X-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and density functional theory, we analyzed the surface core level shifts and surface structure during the initial growth of ABO perovskites on Ge (001) by atomic layer deposition, where A = Ba, Sr and B = Ti, Hf, Zr. We find that the initial dosing of the barium- or strontium-bis(triisopropylcyclopentadienyl) precursors on a clean Ge surface produces a surface phase that has the same chemical and structural properties as the 0.5-monolayer Ba Zintl layer formed when depositing Ba by molecular beam epitaxy.