Room-temperature Bose-Einstein condensation of cavity exciton-polaritons in a polymer.

A Bose-Einstein condensate (BEC) is a state of matter in which extensive collective coherence leads to intriguing macroscopic quantum phenomena. In crystalline semiconductor microcavities, bosonic quasiparticles, known as exciton-polaritons, can be created through strong coupling between bound electron-hole pairs and the photon field. Recently, a non-equilibrium BEC (ref.

Universal recovery of the energy-level degeneracy of bright excitons in InGaAs quantum dots without a structure symmetry.

The lack of structural symmetry which usually characterizes semiconductor quantum dots lifts the energetic degeneracy of the bright excitonic states and hampers severely their use as high-fidelity sources of entangled photons. We demonstrate experimentally and theoretically that it is always possible to restore the excitonic degeneracy by the simultaneous application of large strain and electric fields. This is achieved by using one external perturbation to align the polarization of the exciton emission along the axis of the second perturbation, which then erases completely the energy splitting of the states.

Experimental methods of post-growth-tuning of the excitonic fine structure splitting in semiconductor quantum dots.

Deterministic sources of polarization entangled photon pairs on demand are considered as important building block for quantum communication technology. It has been demonstrated that semiconductor quantum dots (QDs), exhibiting a sufficiently small excitonic fine structure splitting (FSS) can be used as triggered, on-chip sources of polarization entangled photon pairs. As-grown QDs usually do not exhibit the required values of the FSS, making the availability of post-growth tuning techniques highly desired.

Nanomembrane quantum-light-emitting diodes integrated onto piezoelectric actuators.

We integrate resonant-cavity light-emitting diodes containing quantum dots onto substrates with giant piezoelectric response. Via strain, the energy of the photons emitted by the diode can be precisely controlled during electrical injection over a spectral range larger than 20 meV. Simultaneously, the exciton fine-structure-splitting and the biexciton binding energy can be tuned to the values required for entangled photon generation.

Dependence of the redshifted and blueshifted photoluminescence spectra of single In(x)Ga(1-x)As/GaAs quantum dots on the applied uniaxial stress.

We apply external uniaxial stress to tailor the optical properties of In(x)Ga(1-x)As/GaAs quantum dots. Unexpectedly, the emission energy of single quantum dots controllably shifts to both higher and lower energies under tensile strain. Theoretical calculations using a million atom empirical pseudopotential many-body method indicate that the shifting direction and magnitude depend on the lateral extension and more interestingly on the gallium content of the quantum dots.