Haze factor of silver nanowires in variable refractive index environment: experimental and simulation approaches.

While silver nanowires (Ag NWs) have been demonstrated as a highly efficient transparent conducting material, they suffer from strong light scattering, which is quantified by a large haze factor (HF) in the optical spectrum. Here we investigate the influence of the dielectric environment on the light scattering of Ag NWs by comparing experimental measurements and simulations. In air, two peaks on the HF spectra are observed experimentally at the wavelength of= 350 nm and= 380 nm and are attributed by simulations to the influence of the Ag NWs pentagonal shape on the localized surface plasmon resonance.

Electrical properties of strained off-stoichiometric Cu-Cr-O delafossite thin films.

Off-stoichiometric Cu-Cr-O delafossite thin films with different thicknesses were grown by metal organic chemical vapor deposition on substrates with different coefficients of thermal expansion. Seebeck thermoelectric coefficient and resistivity measurements were performed on the range of 300-850 K. A qualitative change in the temperature-dependence of the resistivity is observed at the temperature corresponding to the deposition process, where the transition from tensile to compressive strain takes place.

Tuneable interplay between atomistic defects morphology and electrical properties of transparent p-type highly conductive off-stoichiometric Cu-Cr-O delafossite thin films.

Off-stoichiometric copper chromium delafossites demonstrate the highest values of electric conductivity among the p-type transparent conducting oxides. Morphological and structural changes in CuCrO upon annealing processes are investigated. Chained copper vacancies were previously suggested as source of the high levels of doping in this material.

Tuning the electrical properties of the p-type transparent conducting oxide CuCrO by controlled annealing.

Off-stoichiometric copper chromium oxide delafossite received lately a great interest due to its high p-type electrical conductivity and adequate optical transmittance in the visible range. However, for a suitable integration in active devices such as p-n junctions, transistors or optoelectronic devices, the electronic properties must be efficiently tailored. Here, post-deposition thermal treatment is proven as an adequate approach for finely controlling the electrical properties of this former degenerate semiconducting material.