Modeling with graded interfaces: Tool for understanding and designing record-high power and efficiency mid-infrared quantum cascade lasers.

By employing a graded-interfaces model based on a generalized formalism for interface-roughness (IFR) scattering that was modified for mid-infrared emitting quantum cascade lasers (QCLs), we have accurately reproduced the electro-optical characteristics of published record-performance 4.9 µm- and 8.3 µm-emitting QCLs.

Terahertz difference-frequency-generation quantum cascade lasers on silicon with wire grid current injectors.

We propose the concept and experimentally verify the operation of terahertz quantum cascade laser sources based on intra-cavity Cherenkov difference-frequency generation on a silicon substrate with the current injection layer configured as a metal wire grid. Such a current injector configuration enables high transmission of TM-polarized terahertz radiation into the silicon substrate while simultaneously providing a low-resistivity metal contact for current injection.

Model-based robustness and bistability analysis for methylation-based, epigenetic memory systems.

In recent years, epigenetic memory systems have been developed based on DNA methylation and positive feedback systems. Achieving a robust design for these systems is generally a challenging and multifactorial task. We developed and validated a novel mathematical model to describe methylation-based epigenetic memory systems that capture switching dynamics of methylation levels and methyltransferase amounts induced by different inputs.

Beam stability of buried-heterostructure quantum cascade lasers employing HVPE regrowth.

Measurements of beam stability for mid-infrared (IR)-emitting quantum cascade lasers (QCLs) are important for applications that require the beam to travel through air to remote targets, such as free-space communication links. We report beam-quality measurement results of narrow-ridge, 4.6 µm-emitting buried-heterostructure (BH) QCLs fabricated using ICP etching and HVPE regrowth.

Measurements of the Thermal Resistivity of InAlAs, InGaAs, and InAlAs/InGaAs Superlattices.

Thermal management efforts in nanoscale devices must consider both the thermal properties of the constituent materials and the interfaces connecting them. It is currently unclear whether alloy/alloy semiconductor superlattices such as InAlAs/InGaAs have lower thermal conductivities than their constituent alloys. We report measurements of the crossplane thermal resistivity of InAlAs/InGaAs superlattices at room temperature, showing that the superlattice resistivities are larger by a factor of 1.