Publications by authors named "J A Alexander-Webber"

Nanoscale material systems are central to next-generation optoelectronic and quantum technologies, yet their development remains hindered by limited characterization tools, particularly at terahertz (THz) frequencies. Far-field THz spectroscopy techniques lack the sensitivity for investigating individual nanoscale systems, whereas in near-field THz nanoscopy, surface states, disorder, and sample-tip interactions often mask the response of the entire nanoscale system. Here, we present a THz resonance-amplified near-field spectroscopy technique that can detect subtle conductivity changes in isolated nanoscale systems─such as a single InAs nanowire─under ultrafast photoexcitation.

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Atomically thin group IV monochalcogenides or phosphorene analogues are a promising family of materials. Theoretical calculations predict that monolayers (MLs) should be semiconducting, ferroelectric and ferroelastic at room temperature, exhibit large charge mobilities and large non-linear optical response. Yet, experimental studies of these systems are scarce because of the difficulty to produce such MLs.

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Twisted bilayer graphene provides an ideal solid-state model to explore correlated material properties and opportunities for a variety of optoelectronic applications, but reliable, fast characterization of the twist angle remains a challenge. Here we introduce spectroscopic ellipsometric contrast microscopy (SECM) as a tool for mapping twist angle disorder in optically resonant twisted bilayer graphene. We optimize the ellipsometric angles to enhance the image contrast based on measured and calculated reflection coefficients of incident light.

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The fabrication and characterization of steep slope transistor devices based on low-dimensional materials requires precise electrostatic doping profiles with steep spatial gradients in order to maintain maximum control over the channel. In this proof-of-concept study we present a versatile graphene heterostructure platform with three buried individually addressable gate electrodes. The platform is based on a vertical stack of embedded titanium and graphene separated by an intermediate oxide to provide an almost planar surface.

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We present a high-throughput method for identifying and characterizing individual nanowires and for automatically designing electrode patterns with high alignment accuracy. Central to our method is an optimized machine-readable, lithographically processable, and multi-scale fiducial marker system─dubbed LithoTag─which provides nanostructure position determination at the nanometer scale. A grid of uniquely defined LithoTag markers patterned across a substrate enables image alignment and mapping in 100% of a set of >9000 scanning electron microscopy (SEM) images (>7 gigapixels).

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