Enhancing the Photovoltaic Efficiency of InGaN/GaN Quantum Well Intermediate Band Solar Cells Using Combined Electric and Magnetic Fields.

This study presents a theoretical investigation into the photovoltaic efficiency of InGaN/GaN quantum well-based intermediate band solar cells (IBSCs) under the simultaneous influence of electric and magnetic fields. The finite element method is employed to numerically solve the one-dimensional Schrödinger equation within the framework of the effective-mass approximation. Our findings reveal that electric and magnetic fields significantly influence the energy levels of electrons and holes, optical transition energies, open-circuit voltages, short-circuit currents, and overall photovoltaic conversion performances of IBSCs.

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness.

This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results' accuracy.

Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity.

Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects.

Graphene Oxide Concentration Effect on the Optoelectronic Properties of ZnO/GO Nanocomposites.

In this work, the effects of graphene oxide (GO) concentrations (1.5 wt.%, 2.