Wide-Bandgap Semiconductors for Radiation Detection: A Review.

In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-GaO devices used for radiation detection are described.

Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes.

We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemical vapor deposition (CVD) crystal growth. Boron incorporation was found to lead to the appearance of at least two boron-related deep-level defects, namely, shallow (B) and deep boron (D-center), with concentrations as high as 1 × 10 cm.

Structural and Electrical Characterization of Pure and Al-Doped ZnO Nanorods.

Pure and Al-doped (3 at.%) ZnO nanorods were prepared by two-step synthesis. In the first step, ZnO thin films were deposited on silicon wafers by spin coating; then, ZnO nanorods (NR) and Al-doped ZnO NR were grown using a chemical bath method.

4H-SiC Schottky Barrier Diodes for Efficient Thermal Neutron Detection.

In this work, we present the improved efficiency of 4H-SiC Schottky barrier diodes-based detectors equipped with the thermal neutron converters. This is achieved by optimizing the thermal neutron converter thicknesses. Simulations of the optimal thickness of thermal neutron converters have been performed using two Monte Carlo codes (Monte Carlo N-Particle Transport Code and Stopping and Range of Ions in Matter).

Formamidinium Lead Iodide Perovskite Films with Polyvinylpyrrolidone Additive for Active Layer in Perovskite Solar Cells, Enhanced Stability and Electrical Conductivity.

In this paper, we studied the influence of polyvinylpyrrolidone (PVP) as a stabilization additive on optical and electrical properties of perovskite formamidinium lead iodide (FAPI) polycrystalline thin films on ZnO nanorods (ZNR). FAPI (as an active layer) was deposited from a single solution on ZNR (low temperature processed electron transport layer) using a one-step method with the inclusion of an anti-solvent. The role of PVP in the formation of the active layer was investigated by scanning electron microscopy and contact angle measurements to observe the effect on morphology, while X-ray diffraction was used as a method to study the stability of the film in an ambient environment.

Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime.

We characterized intrinsic deep level defects created in ion collision cascades which were produced by patterned implantation of single accelerated 2.0 MeV He and 600 keV H ions into n-type 4H-SiC epitaxial layers using a fast-scanning reduced-rate ion microbeam. The initial deep level transient spectroscopy measurement performed on as-grown material in the temperature range 150-700 K revealed the presence of only two electron traps, Z (0.