Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures.

The effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions were subjected to neutron irradiation in the reactor channel with the fluence range of 2 × 10 cm ÷ 1.2 × 10 cm.

Plasmon-exciton interaction strongly increases the efficiency of a quantum dot-based near-infrared photodetector operating in the two-photon absorption mode under normal conditions.

Semiconductor quantum dots (QDs) are known for their high two-photon absorption (TPA) capacity. This allows them to efficiently absorb infrared photons with energies lower than the bandgap energy. Moreover, TPA in QDs can be further enhanced by the interaction of excitons of the QDs with plasmons of a metal nanoparticle.