Electrical Properties of Anisotype ZnO:Al/-ZnSe/-CdTe Heterostructures.

ZnO:Al/-ZnSe/-CdTe anisotype heterostructures with diode properties were fabricated by the high-frequency magnetron deposition of ZnO:Al and -ZnSe thin films onto the surface of crystalline -CdTe. The flow of currents limited by the space charge at forward voltages up to 0.45 V and tunneling currents at > 0.