Study and analysis of the optical absorption cross section and energy states broadenings in quantum dot lasers.

In this report, we measured experimentally the modal absorption spectra of the InP and InAsP quantum dot (QD) lasers using multi-section device technique. The optical absorption cross section ( ) and inhomogeneous broadening for the ground state (GS) and excited state (ES) were analyzed and calculated theoretically from the absorption spectra. The results showed that the InP QD laser exhibited to be and for GS and ES respectively, whereas for the InAsP QD material it was found as and for GS and ES respectively.

InAsP quantum dot lasers grown by MOVPE.

We report on InAsP quantum dot lasers grown by MOVPE for 730-780 nm wavelength emission and compare performance with InP dot samples grown under similar conditions and with similar structures. 1-4 mm long, uncoated facet InAsP dot lasers emit between 760 and 775 nm and 2 mm long lasers with uncoated facets have threshold current density of 260 Acm(-2), compared with 150 Acm(-2) for InP quantum dot samples, which emit at shorter wavelengths, 715-725 nm. Pulsed lasing is demonstrated for InAsP dots up to 380 K with up to 200 mW output power.