Publications by authors named "Ivan D Loshkarev"
Nanomaterials (Basel)
December 2022
Article Synopsis
- - The study explores using low-temperature (LT) GaAs layers as a method to reduce dislocation defects in GaAs/Si heterostructures by investigating the effects of these layers and post-growth annealing.
- - Results showed that introducing LT-GaAs layers and performing cyclic annealing significantly reduced dislocation density, surface roughness, and non-radiative recombination centers in the GaAs/Si regions.
- - The improvements in the quality of near-surface GaAs layers are attributed to elastic deformations causing dislocation line bending and gallium vacancies diffusing into the GaAs layers, making these heterostructures suitable for high-quality light-emitting applications with quantum dots.
