Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper.

Atomic layer deposition of ruthenium is studied as a barrierless metallization solution for future sub-10 nm interconnect technology nodes. We demonstrate the void-free filling in sub-10 nm wide single damascene lines using an ALD process in combination with 2.5 Å of ALD TiN interface and postdeposition annealing.

A new procedure to seal the pores of mesoporous low-k films with precondensed organosilica oligomers.

A new strategy to seal mesoporous low-k thin films with a pore size of 3 nm has been developed. This is achieved by spin-coating of a self-assembled carbon-bridged organosilica layer followed by a grafting with hexamethyl disilazane.

Influence of varying porogen loads and different UV cures on low-kappa film characteristics.

Nanoporous low-kappa films were manufactured by using a 3-step process: co-deposition of a skeleton and porogens by PECVD, porogen removal by remote plasma and UV cure. In this study, the influence of both the variation of the porogen load and the different types of UV-cures on several film characteristics were investigated. Improved kappa-values were observed for increased porogen to skeleton ratios and a broad band cure, where the wavelength of the photons is always higher than 200 nm.