A statistical approach for interplanar spacing metrology at a relative uncertainty below 10 using scanning transmission electron microscopy.

Atomic-scale metrology in scanning transmission electron microscopy (STEM) allows to measure distances between individual atomic columns in crystals and is therefore an important aspect of their structural characterization. Furthermore, it allows to locally resolve strain in crystals and to calibrate precisely the pixel size in STEM. We present a method dedicated to the evaluation of interplanar spacing (d-spacing) based on an algorithm including curve fitting of processed high-angle annular dark-field STEM (HAADF STEM) signals.

Ferroelectric Exchange Bias Affects Interfacial Electronic States.

In polar oxide interfaces phenomena such as superconductivity, magnetism, 1D conductivity, and quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces can affect the superconducting properties and sheds light on the mutual effects between the polar oxide and the ferroelectric oxide. Here, the interface between the polar oxide LaAlO and the ferroelectric Ca-doped SrTiO is studied by means of electrical transport combined with local imaging of the current flow with the use of scanning a superconducting quantum interference device (SQUID).