Broadband and low-cross talk mode multiplexer based on subwavelength-assisted phase matching.

Integrated mode multiplexers are key components in photonic networks and are crucial to achieving higher data density. Asymmetric directional couplers represent one of the most common multiplexing architectures, owing to their low losses and scalability, but further bandwidth enhancements are sought after. In this Letter, we demonstrate a multiplexer/demultiplexer link based on asymmetric directional couplers assisted by subwavelength grating metamaterials.

Ultra-compact non-volatile Mach-Zehnder switch enabled by a high-mobility transparent conducting oxide.

Compact and broadband non-volatile silicon devices are mainly absorption based. Hence, access to low-loss non-volatile phase shifters is still a challenge. Here, this problem is addressed by using a high-mobility transparent conducting oxide such as cadmium oxide as a floating gate in a flash-like structure.

Enhancing Pockels effect in strained silicon waveguides.

The magnitude and origin of the electro-optic measurements in strained silicon devices has been lately the object of a great controversy. Furthermore, recent works underline the importance of the masking effect of free carriers in strained waveguides and the low interaction between the mode and the highly strained areas. In the present work, the use of a p-i-n junction and an asymmetric cladding is proposed to eliminate the unwanted carrier influence and improve the electro-optical modulation response.

Non-volatile epsilon-near-zero readout memory.

The lack of memory effect of silicon makes it unfeasible to store electronic data in photonics. Here we propose a non-volatile readout photonic memory, which is electronically written/erased and optically read. The memory utilizes indium tin oxide as a floating gate and exploits its epsilon-near-zero regime and electro-optic activity.

Experimental demonstration of a tunable transverse electric pass polarizer based on hybrid VO/silicon technology.

A tunable transverse electric (TE) pass polarizer is demonstrated based on hybrid vanadium dioxide/silicon (VO/Si) technology. The 20-μm-long TE pass polarizer exploits the phase transition of the active VO material to control the rejection of the unwanted transverse magnetic (TM) polarization. The device features insertion losses below 1 dB at static conditions and insertion losses of 5.

Optical switching in hybrid VO/Si waveguides thermally triggered by lateral microheaters.

The performance of optical devices relying in vanadium dioxide (VO) technology compatible with the silicon platform depends on the polarization of light and VO properties. In this work, optical switching in hybrid VO/Si waveguides thermally triggered by lateral microheaters is achieved with insertion losses below 1 dB and extinction ratios above 20 dB in a broad bandwidth larger than 30 nm. The optical switching response has been optimized for TE and TM polarizations by using a homogeneous and a granular VO layer, respectively, with a small impact on the electrical power consumption.

On the influence of interface charging dynamics and stressing conditions in strained silicon devices.

The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrier effects. A first evidence is the appearance of a variable optical absorption with the applied voltage that should not occur in case of having a purely electro-optic Pockels effect.