Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices.

Quantized magnetotransport is observed in 5.6 × 5.6 mm epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C).

Fe-catalyzed etching of exfoliated graphite through carbon hydrogenation.

We present an investigation on Fe-catalyzed etching of graphite by dewetting Fe thin films on graphite in forming gas. Raman mapping of the etched graphite shows thickness variation in the etched channels and reveals that the edges are predominately terminated in zigzag configuration. X-ray diffraction and photoelectron spectroscopy measurements identify that the catalytic particles are Fe with the presence of iron carbide and iron oxides.

Toward clean and crackless transfer of graphene.

We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device-compatible substrate. On the basis of these results, we have developed a "modified RCA clean" transfer method that has much better control of both contamination and crack formation and does not degrade the quality of the transferred graphene. Using this transfer method, high device yields, up to 97%, with a narrow device performance metrics distribution were achieved.

Superior thermal conductivity of single-layer graphene.

We report the measurement of the thermal conductivity of a suspended single-layer graphene. The room temperature values of the thermal conductivity in the range approximately (4.84+/-0.