Optimizing the Electronic Structure of InO through Mg Doping for NiO/InO p-n Heterojunction Diodes.

InO is a wide bandgap oxide semiconductor, which has the potential to be used as an active material for transparent flexible electronics and UV photodetectors. However, the high concentration of unintentional background electrons existing in InO makes it hard to be modulated by the electric field or form p-n heterojunctions with a sufficient band-bending width at the interface. In this work, we report the reduction of the background electrons in InO by Mg doping (Mg-InO) and thereby improve the device performance of p-n diodes based on the NiO/Mg-InO heterojunction.