Publications by authors named "Ioannis Zeimpekis"

Two-dimensional (2D) transition-metal dichalcogenides have shown great potential for energy storage applications owing to their interlayer spacing, large surface area-to-volume ratio, superior electrical properties, and chemical compatibility. Further, increasing the surface area of such materials can lead to enhanced electrical, chemical, and optical response for energy storage and generation applications. Vertical silicon nanowires (SiNWs), also known as black-Si, are an ideal substrate for 2D material growth to produce high surface-area heterostructures, owing to their ultrahigh aspect ratio.

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In response to the growing need for efficient processing of temporal information, neuromorphic computing systems are placing increased emphasis on the switching dynamics of memristors. While the switching dynamics can be regulated by the properties of input signals, the ability of controlling it via electrolyte properties of a memristor is essential to further enrich the switching states and improve data processing capability. This study presents the synthesis of mesoporous silica (mSiO) films using a sol-gel process, which enables the creation of films with controllable porosities.

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A new family of phase change material based on antimony has recently been explored for applications in near-IR tunable photonics due to its wide bandgap, manifested as broadband transparency from visible to NIR wavelengths. Here, we characterize [Formula: see text] optically and demonstrate the integration of this phase change material in a silicon nitride platform using a microring resonator that can be thermally tuned using the amorphous and crystalline states of the phase change material, achieving extinction ratios of up to 18 dB in the C-band. We extract the thermo-optic coefficient of the amorphous and crystalline states of the [Formula: see text] to be 3.

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The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high power heat pulses are needed to melt-quench the material from crystalline to amorphous. This is especially true in silicon photonics, where the high thermal conductivity of the waveguide material makes heating the PCM energy inefficient.

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In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

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This paper describes a novel, semiautomated design methodology based on a genetic algorithm (GA) using freeform geometries for microelectromechanical systems (MEMS) devices. The proposed method can design MEMS devices comprising freeform geometries and optimize such MEMS devices to provide high sensitivity, large bandwidth, and large fabrication tolerances. The proposed method does not require much computation time or memory.

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The next generation of silicon-based photonic processors and neural and quantum networks need to be adaptable, reconfigurable, and programmable. Phase change technology offers proven nonvolatile electronic programmability; however, the materials used to date have shown prohibitively high optical losses, which are incompatible with integrated photonic platforms. Here, we demonstrate the capability of the previously unexplored material SbSe for ultralow-loss programmable silicon photonics.

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Laser processing is a highly versatile technique for the post-synthesis treatment and modification of transition metal dichalcogenides (TMDCs). However, to date, TMDCs synthesis typically relies on large area CVD growth and lithographic post-processing for nanodevice fabrication, thus relying heavily on complex, capital intensive, vacuum-based processing environments and fabrication tools. This inflexibility necessarily restricts the development of facile, fast, very low-cost synthesis protocols.

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We propose a reconfigurable and non-volatile Bragg grating in the telecommunication C-band based on the combination of novel low-loss phase-change materials (specifically GeSbSeTe and SbS) with a silicon nitride platform. The Bragg grating is formed by arrayed cells of phase-change material, whose crystallisation fraction modifies the Bragg wavelength and extinction ratio. These devices could be used in integrated photonic circuits for optical communications applications in smart filters and Bragg mirrors and could also find use in tuneable ring resonators, Mach-Zehnder interferometers or frequency selectors for future laser on chip applications.

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Unlike MoS ultra-thin films, where solution-based single source precursor synthesis for electronic applications has been widely studied, growing uniform and large area few-layer WS films using this approach has been more challenging. Here, we report a method for growth of few-layer WS that results in continuous and uniform films over centimetre scale. The method is based on the thermolysis of spin coated ammonium tetrathiotungstate ((NH)WS) films by two-step high temperature annealing without additional sulphurization.

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The change of optical properties that some usually natural compounds or polymeric materials show upon the application of external stress is named mechanochromism. Herein, an artificial nanomechanical metasurface formed by a subwavelength nanowire array made of molybdenum disulfide, molybdenum oxide, and silicon nitride changes color upon mechanical deformation. The aforementioned deformation induces reversible changes in the optical transmission (relative transmission change of 197% at 654 nm), thus demonstrating a giant mechanochromic effect.

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Flexible thermoelectric generators (TEGs) can provide uninterrupted, green energy from body-heat, overcoming bulky battery configurations that limit the wearable-technologies market today. High-throughput production of flexible TEGs is currently dominated by printing techniques, limiting material choices and performance. This work investigates the compatibility of physical vapour deposition (PVD) techniques with a flexible commercial process, roll-to-roll (R2R), for thermoelectric applications.

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Field-Effect Transistor sensors (FET-sensors) have been receiving increasing attention for biomolecular sensing over the last two decades due to their potential for ultra-high sensitivity sensing, label-free operation, cost reduction and miniaturisation. Whilst the commercial application of FET-sensors in pH sensing has been realised, their commercial application in biomolecular sensing (termed BioFETs) is hindered by poor understanding of how to optimise device design for highly reproducible operation and high sensitivity. In part, these problems stem from the highly interdisciplinary nature of the problems encountered in this field, in which knowledge of biomolecular-binding kinetics, surface chemistry, electrical double layer physics and electrical engineering is required.

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We present a complete biosensing system that comprises a Thin Film Transistor (TFT)-based nanoribbon biosensor and a low noise, high-performance bioinstrumentation platform, capable of detecting sub-30 mpH unit changes, validated by an enzymatic biochemical reaction. The nanoribbon biosensor was fabricated top-down with an ultra-thin (15 nm) polysilicon semiconducting channel that offers excellent sensitivity to surface potential changes. The sensor is coupled to an integrated circuit (IC), which combines dual switched-capacitor integrators with high precision analog-to-digital converters (ADCs).

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A low cost thin-film transistor (TFT) nanoribbon (NR) sensor has been developed for rapid real-time detection of DNA amplification using an isothermal Recombinase Polymerase Amplification (RPA) method. The semiconductor chip measures DNA amplification through a pH change, rather than via fluorescence. The utility of the method was demonstrated by amplifying CTX-M and NDM, two genes that confer bacterial resistance to cephalosporins and carbapenems, respectively.

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We describe a low cost thin-film transistor (TFT) nanoribbon sensor for detection of the inflammatory biomarker C-reactive protein (CRP) in human serum via a miniature bead-based enzyme-linked immunosorbent assay (ELISA). The TFT nanoribbon sensor measures the reaction products from the ELISA via pH changes. The bead-based ELISA decouples the protein functionalization steps from the sensor surface, increasing the signal and simplifying the assay.

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In this work, we investigate sensor design approaches for eliminating the effects of parasitic resistance in nanowire and nanoribbon biosensors. Measurements of pH with polysilicon nanoribbon biosensors are used to demonstrate a reduction in sensitivity as the sensor length is reduced. The sensitivity (normalised conductance change) is reduced from 11% to 5.

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