Synergistic Molecular Alignment and Dipole Polarization in Stretched Nafion/Poly(vinylidene fluoride) Blend Membranes for High Proton Conduction in PEMFCs.

The nanostructure of Nafion and poly(vinylidene fluoride) (PVDF) blend membranes is successfully aligned through a mechanical uniaxial stretching method. The phase-separated morphology of Nafion molecules distinctly forms hydrophilic proton channels with increased connectivity, resulting in enhanced proton conductivity. Additionally, the crystalline phase of PVDF molecules undergoes a successful transformation from the α- to β-phase during membrane stretching, demonstrating an alignment of fluorine and hydrogen atoms with a TTTT(trans) structure.

Transparent and Flexible Graphene Pressure Sensor with Self-Assembled Topological Crystalline Ionic Gel.

This study demonstrates transparent and flexible capacitive pressure sensors using a high- ionic gel composed of an insulating polymer (poly(vinylidene fluoride--trifluoroethylene--chlorofluoroethylene), P(VDF-TrFE-CFE)) blended with an ionic liquid (IL; 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl) amide, [EMI][TFSA]). The thermal melt recrystallization of the P(VDF-TrFE-CFE):[EMI][TFSA] blend films develops the characteristic topological semicrystalline surface of the films, making them highly sensitive to pressure. Using optically transparent and mechanically flexible graphene electrodes, a novel pressure sensor is realized with the topological ionic gel.

Epitaxially Grown Ferroelectric PVDF-TrFE Film on Shape-Tailored Semiconducting Rubrene Single Crystal.

Epitaxial crystallization of thin poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) films is important for the full utilization of their ferroelectric properties. Epitaxy can offer a route for maximizing the degree of crystallinity with the effective orientation of the crystals with respect to the electric field. Despite various approaches for the epitaxial control of the crystalline structure of PVDF-TrFE, its epitaxy on a semiconductor is yet to be accomplished.

Self-assembled block copolymer micelles with silver-carbon nanotube hybrid fillers for high performance thermal conduction.

The development of polymer-filled composites with an extremely high thermal conductivity (TC) that is competitive with conventional metals is in great demand due to their cost-effective process, light weight, and easy shape-forming capability. A novel polymer composite with a large thermal conductivity of 153 W m(-1) K(-1) was prepared based on self-assembled block copolymer micelles containing two different fillers of micron-sized silver particles and multi-walled carbon nanotubes. Simple mechanical mixing of the components followed by conventional thermal compression at a low processing temperature of 160 °C produced a novel composite with both structural and thermal stability that is durable for high temperature operation up to 150 °C as well as multiple heating and cooling cycles of ΔT = 100 °C.

Laser-induced nondestructive patterning of a thin ferroelectric polymer film with controlled crystals using Ge8Sb2Te11 alloy layer for nonvolatile memory.

We present a simple but robust nondestructive process for fabricating micropatterns of thin ferroelectric polymer films with controlled crystals. Our method is based on utilization of localized heat arising from thin Ge(8)Sb(2)Te(11) (GST) alloy layer upon exposure of 650 nm laser. The heat was generated on GST layer within a few hundred of nanosecond exposure and subsequently transferred to a thin poly(vinylidene fluoride-co-trifluoroethylene) film deposited on GST layer.

Non-volatile organic memory with sub-millimetre bending radius.

High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor.

Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire.

One-dimensional nanowires (NWs) have been extensively examined for numerous potential nano-electronic device applications such as transistors, sensors, memories, and photodetectors. The ferroelectric-gate field effect transistors (Fe-FETs) with semiconducting NWs in particular in combination with ferroelectric polymers as gate insulating layers have attracted great attention because of their potential in high density memory integration. However, most of the devices still suffer from low yield of devices mainly due to the ill-control of the location of NWs on a substrate.

Extremely bright full color alternating current electroluminescence of solution-blended fluorescent polymers with self-assembled block copolymer micelles.

Electroluminescent (EL) devices operating at alternating current (AC) electricity have been of great interest due to not only their unique light emitting mechanism of carrier generation and recombination but also their great potential for applications in displays, sensors, and lighting. Despite great success of AC-EL devices, most device properties are far from real implementation. In particular, the current state-of-the art brightness of the solution-processed AC-EL devices is a few hundred candela per square meter (cd m(-2)) and most of the works have been devoted to red and white emission.

Wafer-scale arrays of nonvolatile polymer memories with microprinted semiconducting small molecule/polymer blends.

Nonvolatile ferroelectric-gate field-effect transistors (Fe-FETs) memories with solution-processed ferroelectric polymers are of great interest because of their potential for use in low-cost flexible devices. In particular, the development of a process for patterning high-performance semiconducting channel layers with mechanical flexibility is essential not only for proper cell-to-cell isolation but also for arrays of flexible nonvolatile memories. We demonstrate a robust route for printing large-scale micropatterns of solution-processed semiconducting small molecules/insulating polymer blends for high performance arrays of nonvolatile ferroelectric polymer memory.

High-temperature operating non-volatile memory of printable single-wall carbon nanotubes self-assembled with a conjugate block copolymer.

Printable non-volatile polymer memories are fabricated with solution-processed nanocomposite films of poly(styrene-block-paraphenylene) (PS-b-PPP) and single-wall carbon nanotubes (SWNTs). The devices show stable data retention at high temperatures of up to 100 °C without significant performance degradation due to the strong, non-destructive, and isomorphic π-π interactions between the SWNTs and PPP block.

Functionalized soft nanoporous materials through supramolecular assembly of end-functionalized polymer blends.

Supramolecular assembly through complementary interaction between molecular subgroups belonging to phase-separating polymer species offers a great opportunity, not only for constructing nanoscale soft templates reminiscent of conventional block copolymer morphologies, but also for tailoring surface properties by facile removal of one of the structure components by cleaving complementary interactions. Herein we report the fabrication of a novel, organic, nanoporous film through supramolecular assembly of two complementarily, end-interacting, mono-end-functionalized polymers under solvent annealing. The film of end-functionalized polymer blends under solvent annealing yielded phase-separated nanodomains that resemble nanoscopically ordered structures of block copolymers, but that are more advantageous due to easily cleavable and exchangeable links between the phase-separated domains.

Coassembly of metal and titanium dioxide nanocrystals directed by monolayered block copolymer inverse micelles for enhanced photocatalytic performance.

Functional nanostructures of self-assembled block copolymers (BCPs) incorporated with various inorganic nanomaterials have received considerable attention on account of their many potential applications. Here we demonstrate the two-dimensional self-assembly of anisotropic titanium dioxide (TiO(2)) nanocrystals (NCs) and metal nanoparticles (NPs) directed by monolayered poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP) copolymer inverse micelles. The independent position-selective assembly of TiO(2) NCs and silver nanoparticles (AgNPs) preferentially in the intermicelle corona regions and the core of micelles, respectively, for instance, was accomplished by spin-coating a mixture solution of PS-b-P4VP and ex situ synthesized TiO(2) NCs, followed by the reduction of Ag salts coordinated in the cores of micelles into AgNPs.

Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation.

A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.

Compression of cross-linked poly(vinylidene fluoride-co-trifluoro ethylene) films for facile ferroelectric polarization.

In this study, we demonstrated a facile route for enhancing the ferroelectric polarization of a chemically cross-linked poly(vinylidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) film. Our method is based on thermally induced cross-linking of a PVDF-TrFE film with a 2,2,4-trimethyl-1,6-hexanediamine (THDA) agent under compression. The remanent polarization (P(r)) of a metal/ferroelectric/metal capacitor containing a cross-linked PVDF-TrFE film increased with pressure up to a certain value, whereas no change in the P(r) value was observed in the absence of THDA.

Block copolymer micelles with near infrared metal phthalocyanine dyes for laser induced writing.

A route has been developed to disperse metal-containing phthalocyanine dyes in a non-polar medium based on amphiphilic block copolymer micelles of poly[styrene-block-(4-vinylpyridine)] (PS-b-P4VP) and poly[styrene-block-(acrylic acid)] (PS-b-PAA) copolymers. Polar P4VP and PAA efficiently encapsulate cobalt(II), manganese(II), and nickel(II) phthalocyanine dyes by axial coordination of nitrogen and µ-oxo bridged dimerization with the transition metals, respectively. Good dispersion of the dyes is confirmed by the linear enhancement of Q-bands in UV-vis absorption spectra with dye concentration.

Chemically cross-linked thin poly(vinylidene fluoride-co-trifluoroethylene)films for nonvolatile ferroelectric polymer memory.

Both chemically and electrically robust ferroelectric poly(vinylidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) films were developed by spin-coating and subsequent thermal annealing with the thermal cross-linking agent 2,4,4-trimethyl-1,6-hexanediamine (THDA). Well-defined ferroelectric β crystalline domains were developed with THDA up to approximately 50 wt %, with respect to polymer concentration, resulting in characteristic ferroelectric hysteresis polarization-voltage loops in metal/cross-linked ferroelectric layer/metal capacitors with remnant polarization of approximately 4 μC/cm(2). Our chemically networked film allowed for facile stacking of a solution-processable organic semiconductor on top of the film, leading to a bottom-gate ferroelectric field effect transistor (FeFET).

Nonvolatile polymer memory with nanoconfinement of ferroelectric crystals.

We demonstrate significantly improved performance of a nonvolatile polymeric ferroelectric field effect transistor (FeFET) memory using nanoscopic confinement of poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) within self-assembled organosilicate (OS) lamellae. Periodic OS lamellae with 30 nm in width and 50 nm in periodicity were templated using block copolymer self-assembly. Confined crystallization of PVDF-TrFE not only significantly reduces gate leakage current but also facilitates ferroelectric polarization switching.