Selective denoising autoencoder for classification of noisy gas mixtures using 2D transition metal dichalcogenides.

Electronic nose (E-nose) technology, which is composed of an array of chemical sensors and pattern recognition, has been widely utilized for the quantitative classification of gas mixtures. However, for the practical use of E-nose in real-industry, advanced algorithms are necessary to handle the noise in sensing data caused by various environmental variables. In order to achieve precise measurements even in real-world environments, it is necessary to denoise and classify noisy sensing data.

Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition.

Molybdenum disulfide (MoS2), a semiconducting two-dimensional layered transition metal dichalcogenide (2D TMDC), with attractive properties enables the opening of a new electronics era beyond Si. However, the notoriously high contact resistance (RC) regardless of the electrode metal has been a major challenge in the practical applications of MoS2-based electronics. Moreover, it is difficult to lower RC because the conventional doping technique is unsuitable for MoS2 due to its ultrathin nature.

Investigation on Contact Properties of 2D van der Waals Semimetallic 1T-TiS/MoS Heterojunctions.

Two-dimensional transition metal dichalcogenides (2D TMDCs) are considered promising alternatives to Si as channel materials because of the possibility of retaining their superior electronic transport properties even at atomic body thicknesses. However, the realization of high-performance 2D TMDC field-effect transistors remains a challenge owing to Fermi-level pinning (FLP) caused by gap states and the inherent high Schottky barrier height (SBH) within the metal contact and channel layer. This study demonstrates that high-quality van der Waals (vdW) heterojunction-based contacts can be formed by depositing semimetallic TiS onto monolayer (ML) MoS.