Influence of static atomic displacements on composition quantification of AlGaN/GaN heterostructures from HAADF-STEM images.

In an earlier publication Rosenauer et al. introduced a method for determination of composition in AlGaN/GaN heterostructures from high-angle annular dark field (HAADF) images. Static atomic displacements (SADs) were neglected during simulation of reference data because of the similar covalent radii of Al and Ga.