Doping-Free High-Performance Photovoltaic Effect in a WSe Lateral Homojunction Formed by Contact Engineering.

Two-dimensional transition metal dichalcogenides (TMDs) are promising materials for semiconductor nanodevices owing to their flexibility, transparency, and appropriate band gaps. A variety of optoelectronic and electronic devices based on TMDs diodes have been extensively investigated due to their unique advantages. However, improving their performance is challenging for commercial applications.

Conversion of Charge Carrier Polarity in MoTe Field Effect Transistor via Laser Doping.

A two-dimensional (2D) atomic crystalline transition metal dichalcogenides has shown immense features, aiming for future nanoelectronic devices comparable to conventional silicon (Si). 2D molybdenum ditelluride (MoTe) has a small bandgap, appears close to that of Si, and is more favorable than other typical 2D semiconductors. In this study, we demonstrate laser-induced p-type doping in a selective region of n-type semiconducting MoTe field effect transistors (FET) with an advance in using the hexagonal boron nitride as passivation layer from protecting the structure phase change from laser doping.