Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging.

Highly compact, filter-free multispectral photodetectors have important applications in biological imaging, face recognition, and remote sensing. In this work, we demonstrate room-temperature wavelength-selective multipixel photodetectors based on GaAsSb nanowire arrays grown by metalorganic vapor phase epitaxy, providing more than 10 light detection channels covering both visible and near-infrared ranges without using any optical filters. The nanowire array geometry-related tunable spectral photoresponse has been demonstrated both theoretically and experimentally and shown to be originated from the strong and tunable resonance modes that are supported in the GaAsSb array nanowires.

New Analytical Method for Measuring the Atomic Weight of Neon Using Gas Chromatography with a Thermal Conductivity Detector.

The atomic weights of neon (Ne) gases were measured by gas chromatography with a thermal conductivity detector (GC-TCD). High-purity neon gas was used as the carrier and sample gases in this study, which is different from typical GC analysis. The peak signals from the GC-TCD appear when the thermal conductivity between the sample and carrier gases is different.

Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap.

InP is currently being used in various (opto)electronic and energy device applications. However, the high cost of InP substrates and associated epitaxial growth techniques has been huge impediments for its widespread use. Here, large-area monocrystalline InP thin films are demonstrated a convenient cracking method, and the InP thin films show material properties identical to their bulk counterparts.

In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse.

Surface passivation of semiconductor nanowires (NWs) is important for their optoelectronic properties and applications. Here, the in situ passivation effect of an epitaxial InP shell and the corresponding photodetector performance is experimentally studied. Compared with the unpassivated GaAs Sb core-only NWs, the GaAs Sb /InP core/shell NWs have shown much stronger photoluminescence and cathodoluminescence intensities.

Engineering III-V Semiconductor Nanowires for Device Applications.

III-V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed.

Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes.

We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the single InGaAs/InP quantum well embedded in the nanowire consists of three components with different chemical compositions, axial quantum well, ring quantum well, and radial quantum well, leading to the electroluminescence emission with multiple wavelengths. The electroluminescence measurements show a strong dependence on current injection levels as well as temperatures and these are explained by interpreting the equivalent circuits in a minimized area of the device.

Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy.

III-V semiconductor multi-quantum-well nanowires (MQW NWs) via selective-area epitaxy (SAE) is of great importance for the development of nanoscale light-emitting devices for applications such as optical communication, silicon photonics, and quantum computing. To achieve highly efficient light-emitting devices, not only the high-quality materials but also a deep understanding of their growth mechanisms and material properties (structural, optical, and electrical) are extremely critical. In particular, the three-dimensional growth mechanism of MQWs embedded in a NW structure by SAE is expected to be different from that of those grown in a planar structure or with a catalyst and has not yet been thoroughly investigated.

Frequency analysis of a step dynamic pressure calibrator.

A dynamic high pressure standard is becoming more essential in the fields of mobile engines, space science, and especially the area of defense such as long-range missile development. However, a complication arises when a dynamic high pressure sensor is compared with a reference dynamic pressure gauge calibrated in static mode. Also, it is difficult to determine a reference dynamic pressure signal from the calibrator because a dynamic high pressure calibrator generates unnecessary oscillations in a positive-going pressure step method.

The Emergence of Oseltamivir-Resistant Seasonal Influenza A (H1N1) Virus in Korea During the 2008-2009 Season.

Objectives: To monitor antiviral drug resistance among seasonal influenza viruses isolated in Korea during the 2008-2009 influenza season, we examined influenza isolates collected through Korea Influenza Surveillance Scheme for antiviral drug susceptibility.

Methods: For genetic analysis of antiviral drug resistance, the matrix (M2) and neuraminidase (NA) genes of each isolate were amplified by reverse transcription-polymerase chain reaction and followed by nucleotide sequencing. For phylogenetic analyses, the sequences of hemagglutinin (HA) and NA genes of each isolate were aligned using multiple alignment program.

Tertiary dentin formation after direct pulp capping with odontogenic ameloblast-associated protein in rat teeth.

Introduction: Odontogenic ameloblast-associated protein (ODAM) has been shown to be specifically expressed in ameloblasts and odontoblasts and has been suggested to play a role in the mineralization of the enamel, possibly through the regulation of matrix metalloproteinase 20. However, its function in dentin is not clear. The purpose of this study was to evaluate the effect of ODAM on tertiary dentin formation.

Amantadine-resistant influenza A viruses isolated in South Korea from 2003 to 2009.

To investigate the frequency of amantadine resistance among influenza A viruses isolated in Korea during the 2003-2009 seasons, 369 (16.8%) 2199 A/H1N1 viruses and 780 (14.8%) of 5263 A/H3N2 viruses were randomly selected.