Molybdenum disulfide nanoparticles decorated reduced graphene oxide: highly sensitive and selective hydrogen sensor.

In this work, we report on the hydrogen (H) sensing behavior of reduced graphene oxide (RGO)/molybdenum disulfide (MoS) nano particles (NPs) based composite film. The RGO/MoS composite exhibited a highly enhanced H response (∼15.6%) for 200 ppm at an operating temperature of 60 °C.

Construction and characterization of Cu²⁺, Ni²⁺, Zn²⁺, and Co²⁺ modified-DNA crystals.

We studied the physical characteristics of modified-DNA (M-DNA) double crossover crystals fabricated via substrate-assisted growth with various concentrations of four different divalent metallic ions, Cu(2+), Ni(2+), Zn(2+), and Co(2+). Atomic force microscopy (AFM) was used to test the stability of the M-DNA crystals with different metal ion concentrations. The AFM images show that M-DNA crystals formed without deformation at up to the critical concentrations of 6 mM of [Cu(2+)], 1.

Postfabrication annealing effects on insulator-metal transitions in VO2 thin-film devices.

In order to investigate the metal-insulator transition characteristics of VO2 devices annealed in reducing atmosphere after device fabrication at various temperature, electrical, chemical, and thermal characteristics are measured and analyzed. It is found that the sheet resistance and the insulator-metal transition point, induced by both voltage and thermal, decrease when the devices are annealed from 200 to 500 °C. The V 2p3/2 peak variation in X-ray photoelectron spectroscopy (XPS) characterization verifies the reduction of thin-films.

Nanocrystalline-graphene-tailored hexagonal boron nitride thin films.

Unintentionally formed nanocrystalline graphene (nc-G) can act as a useful seed for the large-area synthesis of a hexagonal boron nitride (h-BN) thin film with an atomically flat surface that is comparable to that of exfoliated single-crystal h-BN. A wafer-scale dielectric h-BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc-G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc-G-tailored h-BN thin film was systematically analyzed.

Poly-4-vinylphenol and poly(melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics.

Next generation graphene-based electronics essentially need a dielectric layer with several requirements such as high flexibility, high transparency, and low process temperature. Here, we propose and investigate a flexible and transparent poly-4-vinylphenol and poly(melamine-co-formaldehyde) (PVP/PMF) insulating layer to achieve intrinsic graphene and an excellent gate dielectric layer at sub 200 °C. Chemical and electrical effects of PVP/PMF layer on graphene as well as its dielectric property are systematically investigated through various measurements by adjusting the ratio of PVP to PMF and annealing temperature.

Large-scale synthesis of high-quality hexagonal boron nitride nanosheets for large-area graphene electronics.

Hexagonal boron nitride (h-BN) has received a great deal of attention as a substrate material for high-performance graphene electronics because it has an atomically smooth surface, lattice constant similar to that of graphene, large optical phonon modes, and a large electrical band gap. Herein, we report the large-scale synthesis of high-quality h-BN nanosheets in a chemical vapor deposition (CVD) process by controlling the surface morphologies of the copper (Cu) catalysts. It was found that morphology control of the Cu foil is much critical for the formation of the pure h-BN nanosheets as well as the improvement of their crystallinity.