Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.

High- Y₂O₃ thin films were investigated as the gate dielectric for amorphous indium zinc tin oxide (IZTO) thin-film transistors (TFTs). Y₂O₃ gate dielectric was deposited by radio frequency magnetron sputtering (RF-MS) under various working pressures and annealing conditions. Amorphous IZTO TFTs with SiO₂ as the gate dielectric showed a high field-effect mobility (μ) of 19.

Effect of the Active Channel Thickness Variation in Amorphous In-Zn-Sn-O Thin Film Transistor.

Ternary oxide thin films in the In₂O₃-ZnO-SnO₂ system were studied for potential applications in oxide semiconductor thin film transistors (TFTs). An amorphous In-Zn-Sn-O (a-IZTO) active channel layer was deposited by RF magnetron sputtering at room temperature on an ++ Si substrate. Films from a sintered ceramic target with a nominal chemical composition of In:Zn:Sn = 40:50:10 at.

DC Magnetron Sputtered IZTO Thin Films for Organic Photovoltaic Application.

IZTO20 (In0.6Zn0.2Sn0.

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide.

Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances.