Publications by authors named "Ilkka Tittonen"

It is generally assumed that contact angle hysteresis of superhydrophobic surfaces scales with liquid-solid contact fraction, however, its experimental verification has been problematic due to the limited accuracy of contact angle and sliding angle goniometry. Advances in cantilever-based friction probes enable accurate droplet friction measurements down to the nanonewton regime, thus suiting much better for characterizing the wetting of superhydrophobic surfaces than contact angle hysteresis measurements. This work quantifies the relationship between droplet friction and liquid-solid contact fraction, through theory and experimental validation.

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Atomic layer deposited (ALD) transparent thermoelectric materials enable the introduction of energy harvesting and sensing devices onto surfaces of various shapes and sizes in imperceptible manner. Amongst these materials, ZnO has shown promising results in terms of both thermoelectric and optical characteristics. The thermoelectric performance of ZnO can be further optimized by introducing extrinsic doping, to the realization of which ALD provides excellent control.

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Semiconductor heterostructure junctions are known to improve the water oxidation performance in photoelectrochemical (PEC) cells. Depending on the semiconductor materials involved, different kinds of junctions can appear, for instance, type II band alignment where the conduction and valence bands of the semiconductor materials are staggered with respect to each other. This band alignment allows for a charge separation of the photogenerated electron-hole pairs, where the holes will go from low-to-high valance band levels and for the electrons.

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This study evaluates the techno-economic feasibility of five solar-powered concepts for the production of autotrophic microorganisms for food and feed production; the main focus is on three concepts based on hydrogen-oxidizing bacteria (HOB), which are further compared to two microalgae-related concepts. Two locations with markedly different solar conditions are considered (Finland and Morocco), in which Morocco was found to be the most economically competitive for the cultivation of microalgae in open ponds and closed systems (1.4 and 1.

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Herein, enhancements in thermoelectric (TE) performance, both the power factor (PF) and thermal stability, are exhibited by sandwiching HfO and TiO layers onto atomic layer deposited-ZnO thin films. High-temperature TE measurements from 300 to 450 K revealed an almost two-fold improvement in electrical conductivity for TiO/ZnO (TZO) samples, primarily owing to an increase in carrier concentration by Ti doping. On the other hand, HfO/ZnO (HZO) achieved the highest PF values owing to maintaining Seebeck coefficients comparable to pure ZnO.

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Emergent applications in wearable electronics require inexpensive sensors suited to scalable manufacturing. This work demonstrates a large-area thermal sensor based on distributed thermocouple architecture and ink-based multilayer graphene film. The proposed device combines the exceptional mechanical properties of multilayer graphene nanocomposite with the reliability and passive sensing performance enabled by thermoelectrics.

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Solar energy induced water splitting in photoelectrochemical (PEC) cells is one of the most sustainable ways of hydrogen production. The challenge is to develop corrosion resistant and chemically stable semiconductors that absorb sunlight in the visible region and, at the same time, have the band edges matching with the redox level of water. In this work, hematite (α-FeO) thin films were prepared onto an indium-doped tin oxide (ITO; In:SnO) substrate by e-beam evaporation of Fe, followed by air annealing at two different temperatures: 350 and 500 °C.

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RuO/TiO catalysts have shown broad use in promoting a variety of photocatalytic phenomena, such as water splitting and the photodecomposition of organic dyes and pollutants. Most current methods of photodepositing ruthenium oxide species (RuO ) onto titanium dioxide (TiO) films involve precursors that are either difficult to produce and prone to decomposition, such as RuO, or require high-temperature oxidations, which can reduce the quality of the resulting catalyst and increase the risks and toxicity of the procedure. The present work demonstrates the photodeposition of RuO onto TiO films, using potassium perruthenate (KRuO) as a precursor, by improving substantially a procedure known to work on TiO nanopowders.

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Semiconductor nanowire heterostructures have been shown to provide appealing properties for optoelectronics and solid-state energy harvesting by thermoelectrics. Among these nanoarchitectures, coaxial core-shell nanowires have been of primary interest due to their electrical functionality, as well as intriguing phonon localization effects in the surface-dominated regime predicted via atomic simulations. However, experimental studies on the thermophysical properties of III-V semiconductor core-shell nanowires remain scarce regardless of the ubiquitous nature of these compounds in solid-state applications.

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We show that aperiodic superlattices exhibit intriguing interplay between phononic coherent wave interference effects and incoherent transport. In particular, broadband Anderson localization results in a drastic thermal conductivity reduction of 98% at room temperature, providing an ultralow value of 1.3  W m^{-1} K^{-1}, and further yields an anomalously large thermal anisotropy ratio of ∼10^{2} in aperiodic Si/Ge superlattices.

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Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 10 Sm) and thermoelectric properties (ZT = 0.

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Atomic/molecular layer deposition (ALD/MLD) offers unique possibilities in the fabrication of inorganic-organic thin films with novel functionalities. Especially, incorporating nucleobases in the thin-film structures could open new avenues in the development of bio-electronic and photonic devices. Here we report an intense blue and widely excitation-dependent fluorescence in the visible region for ALD/MLD fabricated sodium-uracil thin films, where the crystalline network is formed from hydrogen-bonded uracil molecules linked via Na atoms.

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The electronic and optical properties of p-type copper oxides (CO) strongly depend on the production technique as it influences the obtained phases: cuprous oxide (CuO) or cupric oxide (CuO), the most common ones. Cu films deposited by thermal evaporation have been annealed in air atmosphere, with temperature between 225 and 375 °C and time between 1 and 4 h. The resultant CO films have been studied to understand the influence of processing parameters in the thermoelectric, electrical, optical, morphological, and structural properties.

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In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO hard mask. The PEALD process greatly decreases the deposition temperature of the SiO hard mask. FIB Ga ion implantation on the deposited SiO layer increases the wet etch resistivity of the irradiated region.

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The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates.

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We report on the thermoelectric properties of large-area high-aspect-ratio nanostructures. We fabricate the structures by atomic layer deposition of conformal ZnO thin films on track-etched polycarbonate substrate. The resulting structure consists of ZnO tubules which continue through the full thickness of the substrate.

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We introduce a simple approach to fabricate an aligned carbon nanotube (ACNT) device for broadband polarization control in fiber laser systems. The ACNT device was fabricated by pulling from as-fabricated vertically-aligned carbon nanotube arrays. Their anisotropic properties are confirmed with various microscopy techniques.

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We present a method to measure the in-plane thermal conductivity of thin films by the laser flash technique. The method uses a well-defined structure for the analysis. We have realized the structure by conformal deposition of ZnO films of different thicknesses using atomic layer deposition onto a 20 μm thick ion track etched polycarbonate membrane as substrate.

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We demonstrate a novel atomic layer deposition (ALD) process to make high-quality nanocrystalline titanium dioxide (TiO(2)) with intermediate Al(2)O(3) layers to limit the crystal size. The process is based on titanium chloride (TiCl(4))+water and trimethyl aluminum (TMA)+ozone processes at 250°C deposition temperature. The waveguide losses measured using a prism coupling method for 633 and 1551 nm wavelengths are as low as 0.

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A novel aluminum oxide (Al2O3) hard mask fabrication process with nanoscale resolution is introduced. The Al2O3 mask can be used for various purposes, but in this work it was utilized for silicon patterning using cryogenic deep reactive ion etching (DRIE). The patterning of Al2O3 is a two-step process utilizing focused ion beam (FIB) irradiation combined with wet chemical etching.

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Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 x 10(13) ions cm(- 2) has been determined to be the threshold value for achieving observable etching resistance. Only a thin, approx.

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Modifying the output pulses of a passively Q-switched Nd:YAG laser, operating at 1064 nm, was realized by heating the laser crystal. With the demonstrated laser setups, a 100 K temperature rise led to a more than 50% increase in the pulse energy and a more than 10% decrease in the pulse length. This method offers an effective way to tune the output of the laser without mechanical adjustment or a change of components.

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