Multispectral photodetectors (MSPs) and circularly polarized light (CPL) sensors are important in opto-electronics, photonics, and imaging. A capacitive photodetector consisting of an interdigitated electrode coated with carbon dot/anthraquinone-polydiacetylene is constructed. Photoexcitation of the carbon dots induces transient electron transfer to the anthraquinone moieties, and concomitant change in the film dielectric constant and recorded capacitance.
View Article and Find Full Text PDFMonitoring of nanoparticles (NPs) in air and aquatic environments is an unmet challenge accentuated by the rising exposure to anthropogenic or engineered NPs. The inherent heterogeneity in size, shape, and the stabilizing shell of NPs makes their selective recognition a daunting task. Thus far, only a few technologies have shown promise in detecting NPs; however, they are cumbersome, costly, and insensitive to the NPs morphology or composition.
View Article and Find Full Text PDFACS Appl Mater Interfaces
February 2021
The anion-exchange capacity of the cell-wall sulfated polysaccharide of the red microalga sp. can be exploited for the complexation of metal ions (e.g.
View Article and Find Full Text PDFImages of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when the substrate is clearly not an epitaxial template. Here, we reveal the physics underlying one such hidden growth guidance mechanism through a specific example - the case of ZnO nanowires grown on silicon oxide. We show how electric fields exerted by the insulating substrate may be manipulated through the surface charge to define the orientation and polarity of the nanowires.
View Article and Find Full Text PDFThe ability to control conductivity in semiconductor nanostructures is often challenged by surface states trapping the majority of the charge carriers. Addressing this challenge requires a reliable method for assessing electrical properties such as carrier concentration and mobility. Unfortunately, here we are facing another challenge, as the Hall effect is geometrically inapplicable to nanowires while the field effect model is also challenged by the geometry of the common nanowire field effect transistor, and can only yield channel mobility which is very different from Hall mobility.
View Article and Find Full Text PDFPhotoconductivity is studied in individual ZnO nanowires. Under ultraviolet (UV) illumination, the induced photocurrents are observed to persist both in air and in vacuum. Their dependence on UV intensity in air is explained by means of photoinduced surface depletion depth decrease caused by oxygen desorption induced by photogenerated holes.
View Article and Find Full Text PDFWe present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device is that by reversing the polarity of the applied voltage the luminescence can be selectively obtained from either the nanowire or the substrate. For one polarity of the applied voltage, ultraviolet (and visible) light is generated in the GaN nanowire, while for the opposite polarity infrared light is emitted from the Si substrate.
View Article and Find Full Text PDFCatalytic growth of GaN nanowires by hydride vapour phase epitaxy is demonstrated. Nickel-gold was used as a catalyst. Nanowire growth was limited to areas patterned with catalyst.
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