Electron Irradiation of Metal Contacts in Monolayer MoS Field-Effect Transistors.

Metal contacts play a fundamental role in nanoscale devices. In this work, Schottky metal contacts in monolayer molybdenum disulfide (MoS) field-effect transistors are investigated under electron beam irradiation. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance.

Ionic Liquid as Dispersing Agent of LDH-Carbon Nanotubes into a Biodegradable Vinyl Alcohol Polymer.

A Zn/Al layered double hydroxides (LDHs) hosting carbon nanotubes (80% of CNTs) was synthesized and dispersed into a commercial biodegradable highly amorphous vinyl alcohol polymer at different loading (i.e., 1; 3; 5; 10 wt%).

Nanotip Contacts for Electric Transport and Field Emission Characterization of Ultrathin MoS Flakes.

We report a facile approach based on piezoelectric-driven nanotips inside a scanning electron microscope to contact and electrically characterize ultrathin MoS2 (molybdenum disulfide) flakes on a SiO2/Si (silicon dioxide/silicon) substrate. We apply such a method to analyze the electric transport and field emission properties of chemical vapor deposition-synthesized monolayer MoS, used as the channel of back-gate field effect transistors. We study the effects of the gate-voltage range and sweeping time on the channel current and on its hysteretic behavior.

Bias Tunable Photocurrent in Metal-Insulator-Semiconductor Heterostructures with Photoresponse Enhanced by Carbon Nanotubes.

Metal-insulator-semiconductor-insulator-metal (MISIM) heterostructures, with rectifying current-voltage characteristics and photosensitivity in the visible and near-infrared spectra, are fabricated and studied. It is shown that the photocurrent can be enhanced by adding a multi-walled carbon nanotube film in the contact region to achieve a responsivity higher than 100   mA   W - 1 under incandescent light of 0.1   mW   cm - 2 .

Thermoresistive Properties of Graphite Platelet Films Supported by Different Substrates.

Large-area graphitic films, produced by an advantageous technique based on spraying a graphite lacquer on glass and low-density polyethylene (LDPE) substrates were studied for their thermoresistive applications. The spray technique uniformly covered the surface of the substrate by graphite platelet (GP) unities, which have a tendency to align parallel to the interfacial plane. Transmission electron microscopy analysis showed that the deposited films were composed of overlapped graphite platelets of different thickness, ranging from a few tens to hundreds of graphene layers, and Raman measurements provided evidence for a good graphitic quality of the material.

Field Emission Characterization of MoS Nanoflowers.

Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS nanoflowers on copper foil and characterized their field emission properties, by applying a tip-anode configuration in which a tungsten tip with curvature radius down to 30-100 nm has been used as the anode to measure local properties from small areas down to 1-100 µm. We demonstrate that MoS nanoflowers can be competitive with other well-established field emitters.

Graphene Schottky Junction on Pillar Patterned Silicon Substrate.

A graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.

A WSe vertical field emission transistor.

We report the first observation of a gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on a SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Schottky barrier lowering, respectively. The gate-tuned n-type conduction enables field emission, i.

Transport and Field Emission Properties of MoS₂ Bilayers.

We report the electrical characterization and field emission properties of MoS 2 bilayers deposited on a SiO 2 / Si substrate. Current-voltage characteristics are measured in the back-gate transistor configuration, with Ti contacts patterned by electron beam lithography. We confirm the n-type character of as-grown MoS 2 and we report normally-on field-effect transistors.

Graphene enhanced field emission from InP nanocrystals.

We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode.

Field Emission from Self-Catalyzed GaAs Nanowires.

We report observations of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements were taken inside a scanning electron microscope chamber with a nano-controlled tungsten tip functioning as anode. Experimental data were analyzed in the framework of the Fowler-Nordheim theory.

I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor.

We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W .

Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation.

We studied the effects of low-energy electron beam irradiation up to 10 keV on graphene-based field effect transistors. We fabricated metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO₂, obtaining specific contact resistivity ρ c ≈ 19 k Ω · µ m 2 and carrier mobility as high as 4000 cm²·V·s. By using a highly doped p-Si/SiO₂ substrate as the back gate, we analyzed the transport properties of the device and the dependence on the pressure and on the electron bombardment.

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics.

We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10(-4) mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.

Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors.

We produced graphene-based field-effect transistors by contacting mono- and bi-layer graphene by sputtering Ni or Ti as metal electrodes. We performed electrical characterization of the devices by measuring their transfer and output characteristics. We clearly observed the presence of a double-dip feature in the conductance curve for Ni-contacted transistors, and we explain it in terms of charge transfer and graphene doping under the metal contacts.

Field emission from a selected multiwall carbon nanotube.

The electron field emission characteristics of individual multiwalled carbon nanotubes were investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental set-up ensures a precise evaluation of the geometric parameters (multiwalled carbon nanotube length and diameter and anode-cathode separation) of the field emission system. For several multiwalled carbon nanotubes, reproducible and quite stable emission current behaviour was obtained, with a dependence on the applied voltage well described by a series resistance modified Fowler-Nordheim model.