Anisotropic Strain in Rare-Earth Substituted Ceria Thin Films Probed by Polarized Raman Spectroscopy and First-Principles Calculations.

Lattice strain in oxygen ion conductors can be used to tune their functional properties for applications in fuel cells, sensors, or catalysis. However, experimental measurements of thin film strain in both in- and out-of-plane directions can be experimentally challenging. We propose a method for measuring strain in rare-earth doped ceria thin films by polarized Raman spectroscopy.

High- and low-temperature phases in isostructural 4-chloro-3-nitroaniline and 4-iodo-3-nitroaniline.

The structures of 4-chloro-3-nitroaniline, C6H5ClN2O2, (I), and 4-iodo-3-nitroaniline, C6H5IN2O2, (II), are isomorphs and both undergo continuous (second order) phase transitions at 237 and 200 K, respectively. The structures, as well as their phase transitions, have been studied by single-crystal X-ray diffraction, Raman spectroscopy and difference scanning calorimetry experiments. Both high-temperature phases (293 K) show disorder of the nitro substituents, which are inclined towards the benzene-ring planes at two different orientations.