In-memory encryption using the advanced encryption standard.

Encryption and decryption of data with very low latency and high energy efficiency is desirable in almost every application that deals with sensitive data. The advanced encryption standard (AES) is a widely adopted algorithm in symmetric key cryptography with numerous efficient implementations. Nonetheless, in scenarios involving extensive data processing, the primary limitations on performance and efficiency arise from data movement between memory and the processor, rather than data processing itself.

Extreme ultraviolet lithography reaches 5 nm resolution.

Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high numerical aperture (high NA) EUV scanners. Hitherto, EUV interference lithography (EUV-IL) utilizing transmission gratings has been a powerful patterning tool for the early development of EUV resists and related processes, playing a key role in exploring and pushing the boundaries of photon-based lithography. However, achieving patterning with HPs well below 10 nm using this method presents significant challenges.

Monatomic phase change memory.

Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends crucially on how the materials at the core of this technology adapt to the requirements arising from continued scaling towards higher device densities. A common strategy to fine-tune the properties of phase change memory materials, reaching reasonable thermal stability in optical data storage, relies on mixing precise amounts of different dopants, resulting often in quaternary or even more complicated compounds.