Aerosol-Assisted Chemical Vapor Deposition of 2H-WS From Single-Source Tungsten Dithiolene Precursors.

The tungsten carbonyl dimethyldithiolene (dmdt) complexes W(CO)(dmdt), W(CO)(dmdt), and W(dmdt) were evaluated as potential single-source precursors for the chemical vapor deposition of WS. The results of TGA-MS, DIP-MS, and pyrolysis with NMR analysis were consistent with a thermal decomposition pathway in which loss of 2-butyne through a retro[3+2]cycloaddition of the dithiolene ligand generated terminal sulfido ligands. Aerosol-assisted chemical vapor deposition onto silicon substrates was performed using all three complexes, yielding 2H-WS thin films as characterized by Raman spectroscopy and GI-XRD.

Aerosol-Assisted Chemical Vapor Deposition of MoS with a Thiourea Sulfur Source: Single-Source Precursors vs Coreactant Mixtures.

Aerosol-assisted chemical vapor deposition of MoS from solutions containing the single-source precursors -Mo(CO)(TMTU) and Mo(CO)(TMTU) in toluene was compared to depositions from the coreactant solution containing Mo(CO) and uncoordinated TMTU in toluene. The results were used to assess the significance of ligand precoordination on the properties of the deposited films. Raman spectra and GI-XRD patterns of the films show that the single-source precursors produced more intense and sharper signals for 2H-MoS as compared to the coreactant system of Mo(CO) and TMTU, which is indicative of improved crystallinity.

Molybdenum(IV) dithiocarboxylates as single-source precursors for AACVD of MoS thin films.

Tetrakis(dithiocarboxylato)molybdenum(IV) complexes of the type Mo(SCR) (R = Me, Et, Pr, Ph) were synthesized, characterized, and prescreened as precursors for aerosol assisted chemical vapor deposition (AACVD) of MoS thin films. The thermal behavior of the complexes as determined by TGA and GC-MS was appropriate for AACVD, although the complexes were not sufficiently volatile for conventional CVD bubbler systems. Thin films of MoS were grown by AACVD at 500 °C from solutions of Mo(SCMe) in toluene.