We demonstrate partial-transfer absorption imaging as a technique for repeatedly imaging an ultracold atomic ensemble with minimal perturbation. We prepare an atomic cloud in a state that is dark to the imaging light. We then use a microwave pulse to coherently transfer a small fraction of the ensemble to a bright state, which we image using in situ absorption imaging.
View Article and Find Full Text PDFSystems of quantum objects can be characterized by the correlations between the objects. A technique that precisely measures even the most delicate of these correlations allows models of quantum systems to be tested.
View Article and Find Full Text PDFDetecting topological order in cold-atom experiments is an ongoing challenge, the resolution of which offers novel perspectives on topological matter. In material systems, unambiguous signatures of topological order exist for topological insulators and quantum Hall devices. In quantum Hall systems, the quantized conductivity and the associated robust propagating edge modes--guaranteed by the existence of nontrivial topological invariants--have been observed through transport and spectroscopy measurements.
View Article and Find Full Text PDFSpin-orbit coupling links a particle's velocity to its quantum-mechanical spin, and is essential in numerous condensed matter phenomena, including topological insulators and Majorana fermions. In solid-state materials, spin-orbit coupling originates from the movement of electrons in a crystal's intrinsic electric field, which is uniquely prescribed in any given material. In contrast, for ultracold atomic systems, the engineered 'material parameters' are tunable: a variety of synthetic spin-orbit couplings can be engineered on demand using laser fields.
View Article and Find Full Text PDFProc Natl Acad Sci U S A
July 2012
Measurement techniques based upon the Hall effect are invaluable tools in condensed-matter physics. When an electric current flows perpendicular to a magnetic field, a Hall voltage develops in the direction transverse to both the current and the field. In semiconductors, this behavior is routinely used to measure the density and charge of the current carriers (electrons in conduction bands or holes in valence bands)--internal properties of the system that are not accessible from measurements of the conventional resistance.
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