Noise suppression beyond the thermal limit with nanotransistor biosensors.

Transistor biosensors are mass-fabrication-compatible devices of interest for point of care diagnosis as well as molecular interaction studies. While the actual transistor gates in processors reach the sub-10 nm range for optimum integration and power consumption, studies on design rules for the signal-to-noise ratio (S/N) optimization in transistor-based biosensors have been so far restricted to 1 µm device gate area, a range where the discrete nature of the defects can be neglected. In this study, which combines experiments and theoretical analysis at both numerical and analytical levels, we extend such investigation to the nanometer range and highlight the effect of doping type as well as the noise suppression opportunities offered at this scale.

Towards pharmacological treatment screening of cardiomyocyte cells using Si nanowire FETs.

Silicon nanowires (Si NWs) are the most promising candidates for recording biological signals due to improved interfacing properties with cells and the possibility of high-speed transduction of biochemical signals into detectable electrical responses. The recording of extracellular action potentials (APs) from cardiac cells is important for fundamental studies of AP propagation features reflecting cell activity and the influence of pharmacological substances on the signal. We applied a novel approach of using fabricated Si NW field-effect transistors (FETs) in combination with fluorescent marker techniques to evaluate the functional activity of cardiac cells.

Noise spectroscopy to study the 1D electron transport properties in InAs nanowires.

InAs nanowires (NWs) are recognized as a key material due to their unique transport properties. Despite remarkable progress in designing InAs NW device structures, there are still open questions on device variability. Here, we demonstrate that noise spectroscopy allows us to study not only the parameters of traps, but also to shed light on quantum transport in NW structures.

Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes.

We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which reflect reliable single-electron phenomena. A strong modulation effect of channel conductivity with effectively tuned parameters is revealed.

Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors.

Silicon nanowire (NW) field-effect transistor (FET) sensors of various lengths were fabricated. Transport properties of Si NW FET sensors were investigated involving noise spectroscopy and current-voltage (I-V) characterization. The static I-V dependencies demonstrate the high quality of fabricated silicon FETs without leakage current.