Angew Chem Int Ed Engl
December 2024
Inverted (p-i-n) perovskite solar cells (PSCs) have experienced remarkable advancements in recent years, which is largely attributed to the development of novel hole-transport layer (HTL) self-assembled monolayer (SAM) materials. Methoxy (MeO-) groups are typically introduced into SAM materials to enhance their wettability and effectively passivate the perovskite buried interface. However, MeO-based SAM materials exhibit a mismatch in highest occupied molecular orbital (HOMO) levels with perovskite layer due to the strong electron-donating capability of methoxy group.
View Article and Find Full Text PDFFluorinated additives are proposed to address the issue of domain polydispersity in quasi-2D perovskites. However, the lack of established screening criteria for these additives necessitates a laborious and costly trial-and-error process. Herein, this work explores the behind nature for the first time how various fluorination in fluorinated additives affect domain distribution in quasi-2D perovskites.
View Article and Find Full Text PDFIntroduction: The natural history, the progression of a disease process in an individual over time, has not yet been fully elucidated in hidradenitis suppurativa (HS). In this large multicenter study, we aimed to investigate the natural history of HS and its gender differences.
Methods: This cross sectional study included 827 patients.
Suppression of energy disorders in the vertical direction of a photovoltaic device, along which charge carriers are forced to travel, has been extensively studied to reduce unproductive charge recombination and thus achieve high-efficiency perovskite solar cells. In contrast, energy disorders in the lateral direction of the junction for large-area modules are largely overlooked. Herein, we show that the micro-inhomogeneity characteristics in the surface lateral energetics of formamidinium (FA)-based perovskite films also significantly influence the device performance, particularly with accounting for the stability and scale-up aspects of the devices.
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