Transport properties and enhanced figure of merit of quantum dot-based spintronic thermoelectric device.

Transport properties of quantum dot-based thermoelectric device with magnetic leads placed in external magnetic field are considered. The exact expressions for the thermoelectric coefficients are obtained by the equation of motion method, assuming noninteracting electrons. It is shown that at the maximum power mode the figure of merit of the proposed spintronic device is several times higher than that of a device with unpolarized electrons.

Single-electron shuttle based on electron spin.

A nanoelectromechanical device based on magnetic exchange forces and electron spin flips induced by a weak external magnetic field is suggested. It is shown that this device can operate as a new type of single-electron "shuttle" in the Coulomb blockade regime of electron transport.

Nanoelectromechanical coupling in fullerene peapods probed by resonant electrical transport experiments.

Fullerene peapods, which are carbon nanotubes encapsulating fullerene molecules, can offer enhanced functionality with respect to empty nanotubes. Their prospective applications include, for example, data storage devices, single-electron transistors and spin-qubit arrays for quantum computing. However, the present incomplete understanding of how a nanotube is affected by entrapped fullerenes is an obstacle for peapods to reach their full potential in nanoscale electronic applications.

Phase-controlled force and magnetization oscillations in superconducting ballistic nanowires.

The emergence of superconductivity-induced phase-controlled forces in the (10(-2)-10(-1)) nN range and of magnetization oscillations in nanowire junctions is discussed. A giant magnetic response to applied weak magnetic fields is predicted in the ballistic Josephson junction formed by a superconducting tip and a surface, bridged by a normal-metal nanowire where Andreev states form.

Nonequilibrium plasmons in a quantum wire single-electron transistor.

We analyze a single-electron transistor composed of two semi-infinite one-dimensional quantum wires and a relatively short segment between them. We describe each wire section by a Luttinger model, and treat tunneling events in the sequential approximation when the system's dynamics can be described by a master equation. We show that the steady-state occupation probabilities in the strongly interacting regime depend only on the energies of the states and follow a universal form that depends on the source-drain voltage and the interaction strength.