Publications by authors named "I Tezsevin"

Article Synopsis
  • Atomic Layer Etching (ALE) is crucial for creating complex 3D structures in integrated circuits, and new processes need to be explored to adapt ALE for various materials.
  • A novel isotropic plasma ALE process using hexafluoroacetylacetone (Hhfac) combined with H plasma has been developed, achieving precise control of AlO film thickness with a stable etch rate of 0.16 nm per cycle and a high ALE synergy of 98%.
  • Advanced techniques like Fourier transform infrared spectroscopy (FTIR) and density functional theory (DFT) simulations reveal that the ALE mechanism involves a balance between etching and surface inhibition reactions, allowing effective thickness control on a nanometer scale with minimal contamination.
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Atomic layer deposition (ALD) processes are known to deposit submonolayers of material per cycle, primarily attributed to steric hindrance and a limited number of surface sites. However, an often-overlooked factor is the random sequential adsorption (RSA) mechanism, where precursor molecules arrive one-by-one and adsorb at random surface sites. Consequently, the saturation coverage of precursors significantly deviates from ideal closed packing.

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Small molecule inhibitors (SMIs) have been gaining attention in the field of area-selective atomic layer deposition (ALD) because they can be applied in the vapor-phase. A major challenge for SMIs is that vapor-phase application leads to a disordered inhibitor layer with lower coverage as compared to self-assembled monolayers, SAMs. A lower coverage of SMIs makes achieving high selectivity for area-selective ALD more challenging.

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Area-selective atomic layer deposition using small-molecule inhibitors (SMIs) involves vapor-phase dosing of inhibitor molecules, resulting in an industry-compatible approach. However, the identification of suitable SMIs that yield a high selectivity remains a challenging task. Recently, aniline (CHNH) was shown to be an effective SMI during the area-selective deposition (ASD) of TiN, giving 6 nm of selective growth on SiO in the presence of Ru and Co non-growth areas.

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In this work, various precious and non-precious metals reported in the literature as the most effective catalysts for glucose electrooxidation reaction were investigated by the density functional theory (DFT) approach in order to reveal the mechanisms taking place over the catalysts in the fuel cell. The use of a single-atom catalyst model was adopted by insertion of one Au, Cu, Ni, Pd, Pt, and Zn metal atom on the pyridinic N atoms doped graphene surface (NG). β form of d-glucose in alkaline solution was used to determine the reaction mechanism and intermediates that formed during the reaction.

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