Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980-990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.

We employed the selective-area-epitaxy technique using metalorganic chemical vapor deposition to fabricate and study samples of semiconductor heterostructures that incorporate highly strained InGaAs quantum wells (980-990 nm emission wavelength). Selective area epitaxy of InGaAs quantum wells was performed on templates that had a patterned periodic structure consisting of a window (where epitaxial growth occurred) and a passive mask (where epitaxial growth was suppressed), each with a width of 100 µm for every element. Additionally, a selectively grown potential barrier layer was included, which was characterized by an almost parabolic curvature profile of the surface.

Multiple increase in the radiative efficiency of 1060-nm laser diodes based on heterostructures with tunnel-coupled injection and a single waveguide mode.

An approach aimed at increasing the radiative efficiency in heterostructures operating in a single vertical mode at 1060 nm has been studied. Two types of heterostructures-the STJH (single tunnel junction heterostructure) and DTJH (double tunnel junction heterostructure)-have been developed to obtain the operation of a single waveguide mode of the first and second order, respectively. A multiple increase in the injection efficiency is realized by using tunnel junctions (TJs) embedded in the wide-gap barriers and placed between the active regions.

Modulator chip based on semiconductor heterostructures with a surface diffraction grating for laser beam steering.

Design parameter optimization of a chip based on a heterostructure with a surface diffraction grating for laser beam angle modulation was carried out. It was found that the widest field of view is achieved at outcoupling angles close to the total internal reflection. The highest energy efficiency is provided by using epitaxy Bragg reflector on the substrate side.

High peak optical power of 1ns pulse duration from laser diodes - low voltage thyristor vertical stack.

It is shown that the use of low-voltage GaAs/AlGaAs thyristors as high-speed and high-current switches in vertical stacks with semiconductor lasers ensures the efficient generation of high-power ns-duration laser pulses. The lasing and current dynamics in vertical stacks based on laser diode mini bar emitting at 1060 nm and a single as well as a double thyristor switch is studied. The possibility is demonstrated that a laser diode mini bar (with 3 laser emitters) together with a single thyristor switch can generate laser pulses with a peak power of 6 W with a duration of 950 ps and a peak current of 12 A for an operating voltage of 28 V.