Publications by authors named "I Ost'adal"

Behavior of mobile adsorbed species can be affected by the presence of a strong non-homogeneous electric field. Such a field exists in the proximity of a biased tip of the scanning tunneling microscope. Depending on the electronic properties of the adsorbate and the polarity of the electric field, self-assembly of ordered structures on the surface can be facilitated or prevented.

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The Tl/Si(111)1 × 1 surface is a representative of a 2D layer with Rashba-type spin-split electronic bands. To utilize the spin polarization, doping of the system should be understood on atomic level. We present a study of two types of atomic defects predicted to dope the considered electronic system - Si-induced vacancies and defects associated with the presence of extra Tl atoms.

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The state of matter in fluid phases, determined by the interactions between particles, can be characterized by a pair correlation function (PCF). At the nanoscale, the PCF has been so far obtained experimentally only by means of reciprocal-space techniques. We use scanning tunneling microscopy (STM) at room temperature in combination with lattice-gas kinetic Monte Carlo (KMC) simulations to study a two-dimensional gas of highly mobile molecules of fluorinated copper phthalocyanine on a Si(111)/Tl-(1×1) surface.

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Interaction of ethylene (C2H4) with Si(001)-Sn-2 × 2 and Si(001)-In-2 × 2 at room temperature has been studied using core level (C 1s) X-ray photoelectron spectroscopy with synchrotron radiation and scanning tunneling microscopy. Sn and In form similar dimer chains on Si(001)2 × 1, but exhibit different interaction with ethylene. While ethylene adsorbs on top of Sn dimers of the Si(001)-Sn-2 × 2 surface, the Si(001)-In-2 × 2 surface turned out to be inert.

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We used a configuration-based kinetic Monte Carlo model to explain important features related to formation of the (√3×√3)R30° mosaic of metal and semiconductor atoms on the Si(111) surface. Using first-order desorption processes, we simulate the surprising zero-order desorption spectra, reported in some cases of metal desorption from the Si(111) surface. We show that the mechanism responsible for the zerolike order of desorption is the enhanced desorption from disordered areas.

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