The disorder-to-order (crystallization) process in phase-change materials determines the speed and storage polymorphism of phase-change memory devices. Only by clarifying the fine-structure variation can the devices be insightfully designed, and encode and store information. As essential phase-change parent materials, the crystallized Sb-Te binary system is generally considered to have the cationic/anionic site occupied by Sb/Te atoms.
View Article and Find Full Text PDFBuilding on previous developments [A. Taheridehkordi, S. H.
View Article and Find Full Text PDFThe strong mixing of close levels with two valence electrons in Be-like xenon greatly complicates ab initio QED calculations beyond the first-order approximation. Because of a strong interplay between the electron-electron correlation and QED effects, the standard single-level perturbative QED approach may fail, even if it takes into account the second-order screened QED diagrams. In the present Letter, the corresponding obstacles are overcome by working out the QED perturbation theory for quasidegenerate states.
View Article and Find Full Text PDFWe study how manifestations of strong electron-phonon interaction depend on the carrier concentration by solving the two-dimensional Holstein model for the spin-polarized fermions using an approximation free bold-line diagrammatic Monte Carlo method. We show that the strong electron-phonon interaction, obviously present at very small Fermion concentration, is masked by the Fermi blockade effects and Migdal's theorem to the extent that it manifests itself as moderate one at large carriers densities. Suppression of strong electron-phonon interaction fingerprints is in agreement with experimental observations in doped high temperature superconductors.
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