Properties of Doped GaSb Whiskers at Low Temperatures.

Temperature dependencies of GaSb whiskers' resistance doped with Te to concentration of 1.7 × 10 cm were measured in temperature range 1.5-300 K.

Nanoscale Conductive Channels in Silicon Whiskers with Nickel Impurity.

The magnetization and magnetoresistance of Si whiskers doped with to boron concentrations corresponding to the metal-insulator transition (2 × 10 cm ÷ 5 × 10 cm) were measured at high magnetic fields up to 14 T in a wide temperature range 4.2-300 K. Hysteresis of the magnetic moment was observed for Si p-type whiskers with nickel impurity in a wide temperature range 4.

[Predictors of survival after heart transplantation: role of pretransplantation and posttransplantation factors].

Objective of this study was to assess the impact of pre- and posttransplantation factors on 12-month survival after orthotopic heart transplantation (OHT). Annual survival after OHT was 79.2%.

Split-mode ultrasonic transducer.

A split-mode ultrasonic transducer is investigated in both theory and experiment. This transducer is a two-dimensional structure of periodically poled domains in a ferroelectric wafer with free surfaces. The acoustic vibrations are excited by a radio frequency electric current applied along the length of the wafer, which allows the basal-plane surfaces to be free of metal coatings and thus ready for further biomedical applications.

Magnetic susceptibility of doped Si nanowhiskers.

The present paper deals with studies of magnetic properties of Si(B) whiskers with large boron impurity concentration of up to 1-5% in the range of magnetic fields (0.3-4.0) kOe and temperatures of 4.