Dual-Band Polarization Control with Pairwise Positioning of Polarization Singularities in Metasurfaces.

Emerging applications of metasurfaces in classical and quantum optics are driving the need for precise polarization control of nearly-degenerate, high quality (Q)-factor modes. However, current approaches to creating specifically polarized pairs of modes force a trade-off between maintaining high Q factors and robustness. Here, we solve this challenge by employing pairwise generation, annihilation, and positioning of polarization singularities, derived from symmetry-guaranteed pairs of symmetry-protected bound states in the continuum.

Non-contact imaging of terahertz surface currents with aperture-type near-field microscopy.

Terahertz (THz) near-field imaging and spectroscopy provide valuable insights into the fundamental physical processes occurring in THz resonators and metasurfaces on the subwavelength scale. However, so far, the mapping of THz surface currents has remained outside the scope of THz near-field techniques. In this study, we demonstrate that aperture-type scanning near-field microscopy enables non-contact imaging of THz surface currents in subwavelength resonators.

Control of Quantized Spontaneous Emission from Single GaAs Quantum Dots Embedded in Huygens' Metasurfaces.

Advancements in photonic quantum information systems (QIS) have driven the development of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots (QDs) as single photon sources. Strain-free, monodisperse, and spatially sparse local-droplet-etched (LDE) QDs have recently been demonstrated as a superior alternative to traditional Stranski-Krastanov QDs. However, integration of LDE QDs into nanophotonic architectures with the ability to scale to many interacting QDs is yet to be demonstrated.

Continuous wave terahertz detection using 1550 nm pumped nonlinear photoconductive GaAs metasurfaces.

Terahertz (THz) continuous wave (CW) spectroscopy systems can offer extremely high spectral resolution over the THz band by photo-mixing high-performance telecommunications-band (1530-1565 nm) lasers. However, typical THz CW detectors in these systems use narrow band-gap photoconductors, which require elaborate material growth and generate relatively large detector noise. Here we demonstrate that two-step photon absorption in a nano-structured low-temperature grown GaAs (LT-GaAs) metasurface which enables switching of photoconductivity within approximately one picosecond.