Dynamics of magnetization growth and relaxation in ferrofluids.

The dynamics of the growth and relaxation of the magnetization in ferrofluids are determined using theory based on the Fokker-Planck-Brown equation, and Brownian-dynamics simulations. Magnetization growth starting from an equilibrium nonmagnetized state in zero field, and following an instantaneous application of a uniform field of arbitrary strength, is studied with and without interparticle interactions. Similarly, magnetization relaxation is studied starting from an equilibrium magnetized state in a field of arbitrary strength, and following instantaneous removal of the field.

Orientational and crystallographic relationships in thin films of yttrium orthoferrite on sapphire substrates.

An algorithm is proposed for determining the orientational relationships and crystal unit-cell parameters of thin films using a laboratory X-ray diffractometer and stereographic projections. It is illustrated by the treatment of experimental data obtained for yttrium orthoferrite YFeO films on single crystalline sapphire (AlO) substrates for film thicknesses in the range from 100 to 7000 Å. Precise determination of unit-cell constants and angles is possible by combining the results of X-ray measurements made in the in-plane and out-of-plane geometries.

Environmental assessment of livestock farms in the context of BAT system introduction in Russia.

The article focuses on the environmental and economic assessment of animal/poultry manure utilisation technologies as the sources of the greatest negative impact on environment from agriculture. This procedure is especially topical in the context of current transition to BAT system in Russia. Russian BAT reference books on intensive rearing of pigs and intensive rearing of poultry came into force on June 1, 2018.

Structural coupling across the direct EuO/Si interface.

The ferromagnetic semiconductor EuO is believed to be an effective spin injector when directly integrated with silicon (Si). Injection through spin-selective ohmic contact requires superb structural quality of the interface EuO/Si. A recent breakthrough in manufacturing free-of-buffer-layer EuO/Si junctions calls for structural studies of the interface between the semiconductors.

[Alveolar bone and dental arch defects fulfillment in cleft lip and palate patients].

Nine cleft lip and palate patients aged 17-32 years were included in the study, all having significant maxilla alveolar bone defects. Oral rehabilitation was possible by means of bone augmentation with iliac crest graft, soft tissue plasty and subsequent dental implantation (3 to 6 months after first-step procedures).