Observation of electronic modes in open cavity resonator.

The resemblance between electrons and optical waves has strongly driven the advancement of mesoscopic physics, evidenced by the widespread use of terms such as fermion or electron optics. However, electron waves have yet to be understood in open cavity structures which have provided contemporary optics with rich insight towards non-Hermitian systems and complex interactions between resonance modes. Here, we report the realization of an open cavity resonator in a two-dimensional electronic system.

Robust quantum point contact via trench gate modulation.

Quantum point contacts (QPC) are a primary component in mesoscopic physics and have come to serve various purposes in modern quantum devices. However, fabricating a QPC that operates robustly under extreme conditions, such as high bias or magnetic fields, still remains an important challenge. As a solution, we have analyzed the trench-gated QPC (t-QPC) that has a central gate in addition to the split-gate structure used in conventional QPCs (c-QPC).

Nanomachining-enabled strain manipulation of magnetic anisotropy in the free-standing GaMnAs nanostructures.

Strain perturbs atomic ordering in solids, with far-reaching consequences from an increased carrier mobility to localization in Si, stabilization of electric dipoles and nanomechanical transistor action in oxides, to the manipulation of spins without applying magnetic fields in n-GaAs. In GaMnAs, a carrier-mediated ferromagnetic semiconductor, relativistic spin-orbit interactions - highly strain-dependent magnetic interactions - play a crucial role in determining the magnetic anisotropy (MA) and anisotropic magnetoresistance (AMR). Strain modifies the MA and AMR in a nanomachined GaMnAs structure as measured by the anomalous Hall effect (AHE) and the planar Hall effect (PHE).

Free-Standing GaMnAs Nanomachined Sheets for van der Pauw Magnetotransport Measurements.

We report on the realization of free-standing GaMnAs epilayer sheets using nanomachining techniques. By optimizing the growth conditions of the sacrificial AlGaAs layer, free-standing metallic GaMnAs (with ~6% Mn) microsheets (with ~85 K) with integrated electrical probes are realized for magnetotransport measurements in the van der Pauw geometry. GaMnAs epilayer needs to be physically isolated to avoid buckling effects stemming from the release of lattice mismatch strain during the removal of the AlGaAs sacrificial layer.