Saline based microfluidic soft pressure sensor utilizing a three-dimensional focused electric field for motion and healthcare monitoring.

This paper introduces the 'Spatially Focused Saline-based Pressure Sensor (SF-SaPS)', a novel soft microfluidic pressure sensor featuring a distinctive three-dimensional focusing structure. By critically reducing the cross-sectional area of the microchannel at the focused structure, the SF-SaPS achieves excellent sensitivity to pressure within the sensing region. With the spatially focused region, the SF-SaPS could detect a wide range of pressure from gentle touches to human weight, which is typically unachievable with low-conductivity sensing media such as saline, a medium inherently safe for human use.

Cable-Driven Haptic Interface With Movable Bases Achieving Maximum Workspace and Isotropic Force Exertion.

Haptic interactions play an essential role in education to enhance learning efficiency; however, haptic information for virtual educational content remains lacking. This article proposes a planar cable-driven haptic interface with movable bases that can display isotropic force feedback with maximum workspace extension on a commercial screen display. A generalized kinematic and static analysis of the cable-driven mechanism is derived by considering movable pulleys.

Sensor-Embedded Automatic Grasping Forceps for Precise Corneal Suture in Penetrating Keratoplasty.

In penetrating keratoplasty (PKP), the proper corneal suture placement is very important for successful transplantation and restoring functional vision. Generating sutures with accurate depth is difficult for the surgeon because of the tissue's softness, lack of depth information, and hand tremors. In this paper, an automatic cornea grasping device is proposed, which detects when the device reaches the target suture depth.

High-Performance van der Waals Junction Field-Effect Transistors Utilizing Organic Molecule/Transition Metal Dichalcogenide Interface.

Two-dimensional (2D) transition metal dichalcogenide (TMD) hetero PN junctions with a van der Waals (vdW) interface have received much attention, because PN diodes are basically important to control the vertical current across the junction. Interestingly, the same vdW PN junction structure can be utilized for junction field-effect transistors (JFETs) where in-plane current is controlled along the junction. However, 2D vdW JFETs seem rarely reported, despite their own advantages to achieve when good vdW junction is secured.

Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe/MoTe Stack Channel.

Very recently, stacked two-dimensional materials have been studied, focusing on the van der Waals interaction at their stack junction interface. Here, we report field effect transistors (FETs) with stacked transition metal dichalcogenide (TMD) channels, where the heterojunction interface between two TMDs appears useful for nonvolatile or neuromorphic memory FETs. A few nanometer-thin WSe and MoTe flakes are vertically stacked on the gate dielectric, and bottom MoTe performs as a channel for hole transport.

Vertical and In-Plane Current Devices Using NbS/n-MoS van der Waals Schottky Junction and Graphene Contact.

A van der Waals (vdW) Schottky junction between two-dimensional (2D) transition metal dichalcogenides (TMDs) is introduced here for both vertical and in-plane current devices: Schottky diodes and metal semiconductor field-effect transistors (MESFETs). The Schottky barrier between conducting NbS and semiconducting n-MoS appeared to be as large as ∼0.5 eV due to their work-function difference.