Enhancement of the Electrical Characteristics for 3D NAND Flash Memory Devices Due to a Modified Cell Structure in the Gate Region.

The effect of a modified cell structure in the gate region on the electrical characteristics of three-dimensional (3D) NAND flash memory devices was investigated by using a technology computeraided design simulation. The interference in the memory devices induced by the pass voltage () interference of 3D NAND flash was significantly affected depending on the cell size. The memory device with a modified cell structure was reduced due to an increase in the electron density of the inversion layer in comparison with conventional 3D flash memory devices, and their program operation was enhanced by the increased electric field.

Highly-stable write-once-read-many-times switching behaviors of 1D-1R memristive devices based on graphene quantum dot nanocomposites.

One diode and one resistor (1D-1R) memristive devices based on inorganic Schottky diodes and poly(methylsilsesquioxane) (PMSSQ):graphene quantum dot (GQD) hybrid nanocomposites were fabricated to achieve stable memory characteristics. Current-voltage (I-V) curves for the Al/PMSSQ:GQDs/Al/p-Si/Al devices at room temperature exhibited write-once, read-many-times memory (WORM) characteristics with an ON/OFF ratio of as large as 10 resulting from the formation of a 1D-1R structure. I-V characteristics of the WORM 1D-1R device demonstrated that the memory and the diode behaviors of the 1D-1R device functioned simultaneously.

Reliability Degeneration Mechanisms of the 20-nm Flash Memories Due to the Word Line Stress.

The electrical characteristics of NAND flash memories with a high-k dielectric layer were simulated by using a full three-dimensional technology computer-aided design simulator. The occurrence rate of the errors in the flash memories increases with increasing program/erase cycles. To verify the word line stress effect, electron density in the floating gate of target cell and non-target cell, the drain current in the channel of non-target cell and depletion region of the non-target cell were simulated as a function of program/erase cycle, for various floating gate thicknesses.

Improvement of Resistive Random Access Memory Device Performance via Embedding of Low-K Dielectric Layer.

The switching mechanisms of resistive random access memories (ReRAMs) were strongly related to the formation and rupture of conduction filaments (CFs) in the transition metal oxide (TMO) layer. The novel method approached to enhance the electrical characteristics of ReRAMs by introducing of the local insertion of the low-k dielectric layer inside the TMO layer. Simulation results showed that the insertion of the low-k dielectric layer in the TMO layer reduced the switching volume and the generation of CFs.

Influence of ankle fracture surgery on glycemic control in patients with diabetes.

Background: Although ankle fracture surgery can affect glycemic control by either trauma-induced stress or a postoperative decrease in physical activity, there is little evidence on this issue. This study aimed to evaluate the influence of ankle fracture surgery on glycemic control and to assess the risk factors for poor glycemic control after surgery in patients with diabetes.

Methods: We reviewed the medical records of consecutive patients with diabetes who underwent open reduction and internal fixation for the treatment of ankle fracture at our hospital.

Mobility degradation mechanisms of MOSFETs with a high-k dielectric layer.

The electrical characteristics of MOSFETs with a high-k dielectric layer were simulated by using a full three-dimensional technology computer-aided design simulator. The MOSFETs leakage current increased when their size decreased. The mobility variation mechanisms due to the polarization variation with the positive fixed charges in the high-k dielectric layer and with the negative trap charges in the SiO2 layer were clarified by using a modified mobility model of the universal model taking into account remote phonon scattering effects.

Changes in vitamin D status after surgery in female patients with lumbar spinal stenosis and its clinical significance.

Study Design: A prospective cohort study.

Objective: To demonstrate the changes in vitamin D status after surgery in female patients with lumbar spinal stenosis (LSS), and its correlation with surgical outcomes.

Summary Of Background Data: In patients with LSS, general health including walking ability and nutritional status can be markedly improved by decompressive surgery.