A wireless, solar-powered, optoelectronic system for spatial restriction-free long-term optogenetic neuromodulations.

Numerous wireless optogenetic systems have been reported for practical tether-free optogenetics in freely moving animals. However, most devices rely on battery-powered or coil-powered systems requiring periodic battery replacement or bulky, high-cost charging equipment with delicate antenna design. This leads to spatiotemporal constraints, such as limited experimental duration due to battery life or animals' restricted movement within specific areas to maintain wireless power transmission.

Influence of Growth Temperature on the Characteristics of Single-Junction p–i–n InGaP Solar Cells.

Single-junction p–i–n InGaP solar cells are grown at various temperatures from 620 to 700 °C by low pressure metalorganic chemical vapor deposition on GaAs (001) substrates. The short circuit current density of the p–i–n InGaP solar cells increases by up to 38.8% when the growth temperature is reduced from 700 to 620 °C, while the open circuit voltage and fill factor show relatively small changes.

Selective photochemical synthesis of Ag nanoparticles on position-controlled ZnO nanorods for the enhancement of yellow-green light emission.

A novel technique for the selective photochemical synthesis of silver (Ag) nanoparticles (NPs) on ZnO nanorod arrays is established by combining ultraviolet-assisted nanoimprint lithography (UV-NIL) for the definition of growth sites, hydrothermal reaction for the position-controlled growth of ZnO nanorods, and photochemical reduction for the decoration of Ag NPs on the ZnO nanorods. During photochemical reduction, the size distribution and loading of Ag NPs on ZnO nanorods can be tuned by varying the UV-irradiation time. The photochemical reduction is hypothesized to facilitate the adsorbed citrate ions on the surface of ZnO, allowing Ag ions to preferentially form Ag NPs on ZnO nanorods.

Wafer-scale surface roughening for enhanced light extraction of high power AlGaInP-based light-emitting diodes.

A new approach to surface roughening was established and optimized in this paper for enhancing the light extraction of high power AlGaInP-based LEDs, by combining ultraviolet (UV) assisted imprinting with dry etching techniques. In this approach, hexagonal arrays of cone-shaped etch pits are fabricated on the surface of LEDs, forming gradient effective-refractive-index that can mitigate the emission loss due to total internal reflection and therefore increase the light extraction efficiency. For comparison, wafer-scale FLAT-LEDs without any surface roughening, WET-LEDs with surface roughened by wet etching, and DRY-LEDs with surface roughened by varying the dry etching time of the AlGaInP layer, were fabricated and characterized.

Facile size-tunable fabrication of functional tin dioxide nanostructures by multiple size reduction lithography.

A novel ultraviolet (UV)-assisted imprinting procedure that employs photosensitive tin(II) 2-ethylhexanoate is presented for the facile size-tunable fabrication of functional tin dioxide (SnO(2)) nanostructures by varying annealing temperatures. These imprinted SnO(2) nanostructures were also used as new masters for size reduction lithography. SnO(2) lines down to 40 nm wide were obtained from a silicon master with 200 nm wide lines by simply performing size reduction lithography twice.

Simple and cost-effective fabrication of size-tunable zinc oxide architectures by multiple size reduction technique.

We present a simple size reduction technique for fabricating 400 nm zinc oxide (ZnO) architectures using a silicon master containing only microscale architectures. In this approach, the overall fabrication, from the master to the molds and the final ZnO architectures, features cost-effective UV photolithography, instead of electron beam lithography or deep-UV photolithography. A photosensitive Zn-containing sol-gel precursor was used to imprint architectures by direct UV-assisted nanoimprint lithography (UV-NIL).