Superconductivity emerging from a stripe charge order in IrTe nanoflakes.

Superconductivity in the vicinity of a competing electronic order often manifests itself with a superconducting dome, centered at a presumed quantum critical point in the phase diagram. This common feature, found in many unconventional superconductors, has supported a prevalent scenario in which fluctuations or partial melting of a parent order are essential for inducing or enhancing superconductivity. Here we present a contrary example, found in IrTe nanoflakes of which the superconducting dome is identified well inside the parent stripe charge ordering phase in the thickness-dependent phase diagram.

Coplanar semiconductor-metal circuitry defined on few-layer MoTe via polymorphic heteroepitaxy.

Crystal polymorphism selectively stabilizes the electronic phase of atomically thin transition-metal dichalcogenides (TMDCs) as metallic or semiconducting, suggesting the potential to integrate these polymorphs as circuit components in two-dimensional electronic circuitry. Developing a selective and sequential growth strategy for such two-dimensional polymorphs in the vapour phase is a critical step in this endeavour. Here, we report on the polymorphic integration of distinct metallic (1T') and semiconducting (2H) MoTe crystals within the same atomic planes by heteroepitaxy.

Layer-Confined Excitonic Insulating Phase in Ultrathin Ta2NiSe5 Crystals.

Atomically thin nanosheets, as recently realized using van der Waals layered materials, offer a versatile platform for studying the stability and tunability of the correlated electron phases in the reduced dimension. Here, we investigate a thickness-dependent excitonic insulating (EI) phase on a layered ternary chalcogenide Ta2NiSe5. Using Raman spectroscopy, scanning tunneling spectroscopy, and in-plane transport measurements, we found no significant changes in crystalline and electronic structures as well as disorder strength in ultrathin Ta2NiSe5 crystals with a thickness down to five layers.