Solution-Processed Phototransistors Combining Organic Absorber and Charge Transporting Oxide for Visible to Infrared Light Detection.

This report demonstrates high-performance infrared phototransistors that use a broad-band absorbing organic bulk heterojunction (BHJ) layer responsive from the visible to the shortwave infrared, from 500 to 1400 nm. The device structure is based on a bilayer transistor channel that decouples charge photogeneration and transport, enabling independent optimization of each process. The organic BHJ layer is improved by incorporating camphor, a highly polarizable additive that increases carrier lifetime.

Emerging Design and Characterization Guidelines for Polymer-Based Infrared Photodetectors.

Infrared photodetectors are essential to many applications, including surveillance, communications, process monitoring, and biological imaging. The short-wave infrared (SWIR) spectral region (λ = 1-3 μm) is particularly powerful for health monitoring and medical diagnostics because biological tissues show low absorbance and minimal SWIR autofluorescence, enabling greater penetration depth and improved resolution in comparison with visible light. However, current SWIR photodetection technologies are largely based on epitaxially grown inorganic semiconductors, which are costly, require complex processing, and impose cooling requirements incompatible with wearable electronics.