Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory.

The high nonuniformity and low endurance of the resistive switching random access memory (RRAM) are the two major remaining hurdles at the device level for mass production. Incremental step pulse programming (ISPP) can be a viable solution to the former problem, but the latter problem requires material level innovation. In valence change RRAM, electrodes have usually been regarded as inert (e.