Enhanced near-infrared photodetection via whispering gallery modes in the wave-shaped sidewall silicon nanopillar arrays.

We demonstrate a near-infrared (NIR) photodiode (PD) by using a wave-shaped sidewall silicon nanopillars (WS-SiNPs) structure. The designed WS sidewall nanostructure increases the horizontal component of incident light and induces multiple whispering-gallery modes with low-quality factor, which increases the light absorption path. Thus, the WS-SiNP PD shows improved spectral responsivity and external quantum efficiency over straight sidewall silicon nanopillars and planar PDs in the NIR region.

Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access Memory.

Three-terminal (3-T) thyristor random-access memory is explored for a next-generation high-density nanoscale vertical cross-point array. The effects of standby voltages on the device are thoroughly investigated in terms of gate-cathode voltage (V) and anode-cathode voltage (V) in the standby state for superior data retention characteristics and low-power operation. The device with the optimized V of - 0.

DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure.

We investigate DC characteristics of AlGaN/GaN high-electron mobility transistors by using a source-bridged field plate and additional bottom plate (BP) structure. The analysis of experimental data was performed with a two-dimensional simulator. Source connected BP structure stabilized threshold voltage and transconductance regardless of various drain voltages.

Breakdown Voltage Enhancement in AlGaN/GaN High-Electron Mobility Transistor by Optimizing Gate Field-Plate Structure.

We optimize various gate head structures to improve breakdown voltage characteristics of AlGaN/GaN high-electron mobility transistors by a two-dimensional device simulator based on a T-shaped gate-connected field-plate. Field-plates (FPs) alleviate electric field spikes near the gate and drain-side overlapping edges, which eventually disperse electron avalanche and charge trapping effects. Hence, the more uniform electric field distribution provides improved breakdown voltage of the device.

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure.