Physical Reservoir Computing Using Tellurium-Based Gate-Tunable Artificial Photonic Synapses.

We report tellurium (Te) thin-film-based artificial photonic synapses and their application to physical reservoir computing (PRC). The Te-based artificial photonic synapses were fabricated by using sputtered Te thin films and spray-coated MXene (TiC) electrodes. A thorough investigation of the field-dependent persistent photoconductivity (PPC) of the Te channel revealed that the relaxation speed of the transient photocurrent depended on the gate bias.

Interface Trap Suppression and Electron Doping in Van der Waals Materials Using Cross-Linked Poly(vinylpyrrolidone).

The instability of van der Waals (vdW) materials leads to spontaneous morphological and chemical transformations in the air. Although the passivation of vdW materials with other resistive materials is often used to solve stability issues, this passivation layer can block carrier injection and thus interfere with charge transfer doping. In this study, a facile method is proposed for n-doping and mediation of Se vacancies in tungsten diselenide (WSe) by poly(vinylpyrrolidone) (PVP) coating.

The first report on genome sequence of high-level ciprofloxacin-resistant Salmonella enterica serovar Indiana ST17 in Korean livestock.

Objectives: Salmonella enterica Indiana ST17 strain (K16SI097), exclusively found in China, was first isolated in 2016 in Korea from a chicken carcass. This strain contains multidrug-resistant genes, and is particularly resistant to ciprofloxacin (64 μg/mL). In this study, we aimed to elucidate the genomic relationship and compare antimicrobial resistance factors between Korean chicken-derived and Chinese clones of S.

Distinctive Field-Effect Transistors and Ternary Inverters Using Cross-Type WSe/MoS Heterojunctions Treated with Polymer Acid.

The electrical and optical characteristics of two-dimensional (2D) transition-metal dichalcogenides (TMDCs) can be improved by surface modification. In this study, distinctive field-effect transistors (FETs) were realized by forming cross-type 2D WSe/MoS p-n heterojunctions through surface treatment using poly(methyl methacrylate--methacrylic acid) (PMMA--PMAA). The FETs were applied to new ternary inverters as multivalued logic circuits (MVLCs).

Hybrid Characteristics of MoS Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor.

An n-type MoS monolayer grown by chemical vapor deposition method was partially hybridized with an organic semiconducting p-type tetracene thin film. The photoluminescence (PL) intensity in the hybrid region of the MoS/tetracene is clearly lower than that of pristine tetracene because of the charge-transfer effect, which was confirmed by the decrease in exciton lifetimes. Decrease in the temperature led to blue-shift in the PL peak position of MoS layers and, consequently, the PL intensities of both tetracene and MoS considerably increased owing to the decrease in phonon interaction.

Photovoltaic Field-Effect Transistors Using a MoS and Organic Rubrene van der Waals Hybrid.

A several-layer n-type MoS was partially hybridized with an organic crystalline p-type rubrene nanosheet through van der Waals interactions to fabricate a two-dimensional (2-D) lateral-type n-p heterojunction optoelectronic device. The field-effect transistors (FETs) using lateral-type MoS/rubrene hybrids exhibited both gate-tunable diode and anti-ambipolar transistor characteristics. The FET devices show the coexistence of n-type states, p-type states, and off-states controlled by the gate bias.